臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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	機構典藏計畫網站
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	臺大學術典藏NTU Scholars

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Institution	Date	Title	Author
南台科技大學	2006-04	GaN-based p-i-n sensors with ITO contacts	S. J. Chang; T. K. Ko; Y. K. Su; Y. Z. Chiou; C. S. Chang; S. C. Shei; J. K. Sheu; W. C. Lai; Y. C. Lin; W. S. Chen;C. F. Shen;林永春
南台科技大學	2006	Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring	李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Tun; G. C. Chi
南台科技大學	2006	Planar Ultraviolet Photodetectors Formed by Si Implantation into p-GaN	李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Kao; C. J. Tun; G. C. Chi
南台科技大學	2006	Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation	李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Kao; G. C. Chi
南台科技大學	2006	InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface	李明倫; J. K. Sheu; C. M. Tsai; M. L. Lee; S. C .Shei; W. C. Lai
南台科技大學	2006	Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride	李明倫; C. J. Tun; J. K. Sheu; M. L. Lee; C. C. Hu; C. K. Hsieh; G. C. Chi
南台科技大學	2006	Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN	李明倫; J. K. Sheu; M. L. Lee; C. J. Tun; S.W. Lin
南台科技大學	2006	Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer	李明倫; M. L. Lee; J. K. Sheu; S. W. Lin
南台科技大學	2006	Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring	李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Tun; G. C. Chi
南台科技大學	2006	Effects of thermal annealing on transparent gallium-doped zinc oxide films prepared by sputtering system	李明倫; K. H. Chang; K. W. Hsu; H. H. Chen; M. L. Lee; J. K. Sheu
南台科技大學	2006	Ultraviolet band-pass GaN/AZO Schottky barrier photodetectors	李明倫; M. L. Lee; P. F. Chi; S. J. Tu; H. H. Chen; J. K. Sheu
南台科技大學	2006	Inverted GaN P-I-N Photodiodes with a buried tunneling junction	李明倫; M. L. Lee; J. K. Sheu; W.C.Lai; S.C.Shei; S.J.Chang
南台科技大學	2005	Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase	李明倫; J. K. Sheu; S. S. Chen; M. L. Lee; W. C. Lai; W. H. Chang; G. C. Chi
南台科技大學	2005	Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors	李明倫; C. J. Kao; M. C. Chen; C.J. Tun; G. C. Chi; J. K. Sheu; W. C. Lai; M. L. Lee; F.Ren; S.J.Pearton
南台科技大學	2005	Rectifying characteristics of WSi0.8--GaN Schottky barrier diodes with a GaN cap layer grown at low temperature	李明倫; J. K. Sheu; M. L. Lee; H. C. Tseng; W. C. Lai; G. C. Chi
南台科技大學	2005	Aluminum gallium nitride ultraviolet p-i-n photodiodes with buried p-layer structure,Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure	李明倫; J. K. Sheu; M. L. Lee; W. C. Lai
南台科技大學	2005	AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers	李明倫; T. K. Ko; S. J. Chang; Y. K. Su; M. L. Lee; C. S. Chang; Y. C. Lin; S. C. Shei; J. K. Sheu; W. S. Chen; C. F. Shen
南台科技大學	2005	Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes	李明倫; J. K. Sheu; M. L. Lee; W. C. Lai
南台科技大學	2005	Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase	李明倫; J. K. Sheu; S. S. Chen; M. L. Lee; W. C. Lai; W. H. Chang; G. C. Chi
南台科技大學	2005	GaN-based Ultraviolet p-i-n Photodiodes with Buried tunneling junction	李明倫; M. L. Lee; H. H. Chen; J. K. Sheu; W. C. Lai
南台科技大學	2005	Enhanced Light Output of GaN-based LEDs With Ga-doped ZnO Transparent Contact Layer	李明倫; M. L. Lee; J. K. Sheu; Y.S Lu
南台科技大學	2004-10	Planar GaN-based UV Photodetectors formed by Si Implantation	李明倫; M. C. Chen; J.K. Sheu; M. L. Lee; G.C. Chi; C.J. Gao; C.J. Tun
南台科技大學	2004	Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer	李明倫; M. L. Lee; J. K. Sheu; Y. K. Su; S. J. Chang; W. C. Lai; G. C. Chi
南台科技大學	2004	Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors	李明倫; C. J. Kao; J. K. Sheu; W. C. Lai; M. L. Lee; M. C. Chen; G. C. Chi
南台科技大學	2004	Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes	李明倫; J. K. Sheu; M. L. Lee; W. C. Lai

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