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Showing items 51-60 of 60 (2 Page(s) Totally) << < 1 2 View [10|25|50] records per page
| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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李明倫; M. L. Lee; J. K. Sheu; C. J. Kao; M. C. Chen; C. J. Tun; W. C. Lai; Y. K. Su; S.J. Chang; G. C. Chi |
| 國立成功大學 |
2003 |
High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode
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Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu |
| 南台科技大學 |
2002 |
Planar GaN n+-p photodetectors formed by Si implants into p-GaN
|
李明倫; J. K. Sheu; M. L. Lee; L. S. Yeh; C. J. Kao; C. J. Tun; M. J. Chen; G. C. Chi; S. J. Chang; Y. K. Su; C. T. Lee |
| 南台科技大學 |
2002 |
Characterization of Si implants in p-type GaN
|
李明倫; J. K. Sheu; M. L. Lee; C. J. Tun; C. J. Kao; L. S. Yeh; C. C. Lee; G. C. Chi |
| 南台科技大學 |
2002 |
GaN p–n junction diode formed by Si ion implantation into p-GaN
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李明倫; M. L. Lee; J. K. Sheu; L. S. Yeh; M. S. Tsai; C. J. Kao; C. J. Tun; S. J. Chang; G. C. Chi |
| 國立中山大學 |
2002 |
Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures
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Ikai Lo;J.K. Tsai;Li-Wei Tu;K.Y. Hsieh;C.S. Liu;J.H. Huang;S. Elhamri;W.C. Mitchel;J.K. Sheu |
| 國立中山大學 |
2002 |
Piezoelectric Effect on Al0.35-δInδGa0.0.65N/GaN Heterostructures
|
I. Lo;J.K. Tsai;L.W. Tu;K.Y. Hsieh;C.S. Liu;J.H. Huang;S. Elhamri;W.C. Mitchel;J.K. Sheu |
| 國立中山大學 |
2001 |
Polymer PBT/n-GaN metal-insulator-semiconductor structures
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L.W. Tu;P.H. Tsao;K.H. Lee;I. Lo;S.J. Bai;C.C. Wu;K.Y. Hsieh;J.K. Sheu |
| 國立中山大學 |
2001 |
Polymer PBT/n-GaN Metal-Insulator-Semiconductor Structure
|
L.W. Tu;P.H. Tsao;K.H. Lee;I. Lo;S.J. Bai;C.C. Wu;K.Y. Hsieh;J.K. Sheu |
| 國立中山大學 |
2000 |
High-Dielectric-Constant Ta2O5/GaN Metal-Oxide-Semiconductor Structure
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L.W. Tu;W.C. Kuo;K.H. Lee;P.H. Tsao;C.M. Lai;A.K. Chu;J.K. Sheu |
Showing items 51-60 of 60 (2 Page(s) Totally) << < 1 2 View [10|25|50] records per page
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