臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

About TAIR
	About TAIR

Browse By
	Institution
	Author
	Title
	Date
	Statistics Chart
	Institution Facts
	Trend

News
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

Copyright
	Publisher & Journal Policy
	TAIR Copyright Conference Minutes

Related Links
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

"j kwo"

Return to Browse by Author
Sorting by Title	Sort by Date

Showing items 1-20 of 20 (1 Page(s) Totally)
1
View [10|25|50] records per page

Institution	Date	Title	Author
國立臺灣海洋大學	2018-06	A new stable, crystalline capping material for topological insulators	J. Kwo; H. Y. Lin; C. K. Cheng; K. H. M. Chen; C. C. Tseng; S. W. Huang; M. T. Chang; S. C. Tseng
國立臺灣海洋大學	2016-05	Demonstration of large field effect in topological insulator films via a high-k back gate	J. Kwo; C. Y. Wang; H. Y. Lin; S. R. Yang; K. H. M. Chen; Y. H. Lin; K. H. Chen; L. B. Young; C. K. Cheng; S. C. Tseng; Y. T. Fanchiang; M. Hong
國立臺灣海洋大學	2015-09	Epitaxial ferromagnetic Fe 3 Si on GaAs(111)A with atomically smooth surface and interface	M. Hong; Y. C. Liu; Y. W. Chen; S. C. Tseng; M. T. Chang; S. C. Lo; Y. H. Lin; K. Cheng; H. Y. Hung; C. H. Hsu; J. Kwo
國立中山大學	2008	Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters	Y.C. Chang;M.L. Huang;K.Y. Lee;Y.J. Lee;T.D. Lin;M. Hong;J. Kwo;T.S. Lay;C.C. Liao;K.Y. Cheng
國立中山大學	2006	Structural and electrical characteristics of Ga2O3(Gd2O3)/GaAs under high temperature annealing	C.P. Chen;Y.J. Lee;Y.C. Chang;Z.K. Yang;M. Hong;J. Kwo;H.Y. Lee;T.S. Lay
國立東華大學	2005	Thin single-crystal Sc2O3 films epitaxially grown on Si (111)— structure and electrical properties	祁錦雲; Jim-Yong Chi; C.P. Chen; M. Hong; J. Kwo; H.M. Cheng; Y.L. Huang; S.Y. Lin; J. Chi; H.Y. Lee; Y.F. Hsieh ;J.P. Mannaerts
國立東華大學	2005	Depletion-mode InGaAs/GaAs MOSFET with oxide passivated by amorphous Si	祁錦雲; Jim-Yong Chi; P. J. Tsai; U.N.Chiu;L. K. Chu; Y. W. Chen; H. P. Yang; P. Chang; J. Kwo; J. Chi; M. Hong
國立東華大學	2005	Growth Rate Effects on InGaAs/GaAs Quantum Dots	祁錦雲; Jim-Yong Chi; Chun-Yuan Huang; Tzu-Min Ou; Wen-Ten Chang; Meng-Chyi Wu; Jeng-Jung Shen; Chiu-Yueh Liang; Shih-Yen Lin; Pen Chang; Tsung-Da Lin; Minghwei Hong; J. Kwo; Jim-Yong Chi
國立中山大學	2005	Depth-profile study of the electronic structures at Ga2O3(Gd2O3)- and Gd2O3-GaN interfaces by x-ray photoelectron spectroscopy	T.S. Lay;Y.Y. Liao;W.H. Hung;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學	2005	Depth-profiling the electronic structures at HfO2/Si interfaces grown by molecular beam epitaxy	T.S. Lay;S.C. Chang;G.J. Din;C.C. Yeh;W.H. Hung;W.G. Lee;J. Kwo;M. Hong
國立中山大學	2003	Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor	T.S. Lay;Y.Y. Liao;W.D. Liu;Y.H. Lai;W.H. Hung;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學	2002	Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallization annealing	T.S. Lay;W.D. Liu;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學	2001	Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces	T.S. Lay;M. Hong;J. Kwo;J.P. Mannaerts;W.H. Hung;D.J. Huang
國立中山大學	2001	C-V and G-V characterization of Ga2O3(Gd2O3)/GaN capacitor with low interface state density	T.S. Lay;W.D. Liu;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學	2001	Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy	T.S. Lay;K.H. Huang;W.H. Hung;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學	2001	Properties of high k gate dielectrics of Gd2O3 and Y2O3 for Si	J. Kwo;M. Hong;A.R. Kortan;K.L. Queeney;Y.J. Chabal;R.L. Opila;D.A. Muller;S.N.G. Chu;B.J. Sapjeta;T.S. Lay;J.P. Mannaerts;T. Boone;H.W. Krautter;J.J. Krajewski;A.M. Sergent;J.M. Rosamilia
國立中山大學	2000	Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes	M. Hong;K.A. Anselm;J. Kwo;H.M. Ng;J.N. Baillargeon;A.R. Kortan;J.P. Mannaerts;A.Y. Cho;C.M. Lee;J.I. Chyi;T.S. Lay
國立中山大學	1998	Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs	M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen
國立中山大學	1997	Novel Ga2O3(Gd2O3) Passivation Techniques to Produce Low Dit Oxide-GaAs Interfaces	M. Hong;J.P. Mannaerts;J.E. Bowers;J. Kwo;M. Passlack;W.Y. Hwang;L.W. Tu
國立中山大學	1996	Recombination Velocity at Oxide-GaAs Interfaces Fabricated by In-situ Molecular Beam Epitaxy	M. Passlack;M. Hong;J.P. Mannaerts;J. Kwo;L.W. Tu

Showing items 1-20 of 20 (1 Page(s) Totally)
1
View [10|25|50] records per page

	English \| 正體中文 \| 简体中文 \| Total items :2823024
	Visitors : 30250814 Online Users : 943 Project Commissioned by the Ministry of Education Project Executed by National Taiwan University Library