臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
國立中山大學	2003	Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor	T.S. Lay;Y.Y. Liao;W.D. Liu;Y.H. Lai;W.H. Hung;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學	2002	Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallization annealing	T.S. Lay;W.D. Liu;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學	2001	Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces	T.S. Lay;M. Hong;J. Kwo;J.P. Mannaerts;W.H. Hung;D.J. Huang
國立中山大學	2001	C-V and G-V characterization of Ga2O3(Gd2O3)/GaN capacitor with low interface state density	T.S. Lay;W.D. Liu;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學	2001	Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy	T.S. Lay;K.H. Huang;W.H. Hung;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學	2001	Properties of high k gate dielectrics of Gd2O3 and Y2O3 for Si	J. Kwo;M. Hong;A.R. Kortan;K.L. Queeney;Y.J. Chabal;R.L. Opila;D.A. Muller;S.N.G. Chu;B.J. Sapjeta;T.S. Lay;J.P. Mannaerts;T. Boone;H.W. Krautter;J.J. Krajewski;A.M. Sergent;J.M. Rosamilia
國立中山大學	2000	Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes	M. Hong;K.A. Anselm;J. Kwo;H.M. Ng;J.N. Baillargeon;A.R. Kortan;J.P. Mannaerts;A.Y. Cho;C.M. Lee;J.I. Chyi;T.S. Lay
國立中山大學	1998	Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs	M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen
國立中山大學	1997	Novel Ga2O3(Gd2O3) Passivation Techniques to Produce Low Dit Oxide-GaAs Interfaces	M. Hong;J.P. Mannaerts;J.E. Bowers;J. Kwo;M. Passlack;W.Y. Hwang;L.W. Tu
國立中山大學	1996	Recombination Velocity at Oxide-GaAs Interfaces Fabricated by In-situ Molecular Beam Epitaxy	M. Passlack;M. Hong;J.P. Mannaerts;J. Kwo;L.W. Tu

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