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Institution Date Title Author
臺大學術典藏 2018-09-10T03:50:03Z (AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN
國立中山大學 2004 Delay-independent observer-based control for a class of neutral systems J.M. Kuo; C.H. Lien; K.K. Fan; J.G. Hsieh
義守大學 1999-06 A High Efficient Multiplier for the RS Decoder J. H. Jeng;J. M. Kuo;T. K. Truong
國立中山大學 1998 Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen

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