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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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2019臺灣學術機構典藏
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Institution Date Title Author
國立東華大學 2005 Thin single-crystal Sc2O3 films epitaxially grown on Si (111)— structure and electrical properties 祁錦雲; Jim-Yong Chi; C.P. Chen; M. Hong; J. Kwo; H.M. Cheng; Y.L. Huang; S.Y. Lin; J. Chi; H.Y. Lee; Y.F. Hsieh ;J.P. Mannaerts
國立中山大學 2005 Depth-profile study of the electronic structures at Ga2O3(Gd2O3)- and Gd2O3-GaN interfaces by x-ray photoelectron spectroscopy T.S. Lay;Y.Y. Liao;W.H. Hung;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學 2003 Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor T.S. Lay;Y.Y. Liao;W.D. Liu;Y.H. Lai;W.H. Hung;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學 2002 Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallization annealing T.S. Lay;W.D. Liu;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學 2001 Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces T.S. Lay;M. Hong;J. Kwo;J.P. Mannaerts;W.H. Hung;D.J. Huang
國立中山大學 2001 C-V and G-V characterization of Ga2O3(Gd2O3)/GaN capacitor with low interface state density T.S. Lay;W.D. Liu;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學 2001 Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy T.S. Lay;K.H. Huang;W.H. Hung;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學 2001 Properties of high k gate dielectrics of Gd2O3 and Y2O3 for Si J. Kwo;M. Hong;A.R. Kortan;K.L. Queeney;Y.J. Chabal;R.L. Opila;D.A. Muller;S.N.G. Chu;B.J. Sapjeta;T.S. Lay;J.P. Mannaerts;T. Boone;H.W. Krautter;J.J. Krajewski;A.M. Sergent;J.M. Rosamilia
國立中山大學 2000 Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes M. Hong;K.A. Anselm;J. Kwo;H.M. Ng;J.N. Baillargeon;A.R. Kortan;J.P. Mannaerts;A.Y. Cho;C.M. Lee;J.I. Chyi;T.S. Lay
國立中山大學 1998 Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen
國立中山大學 1997 Novel Ga2O3(Gd2O3) Passivation Techniques to Produce Low Dit Oxide-GaAs Interfaces M. Hong;J.P. Mannaerts;J.E. Bowers;J. Kwo;M. Passlack;W.Y. Hwang;L.W. Tu
國立中山大學 1996 Recombination Velocity at Oxide-GaAs Interfaces Fabricated by In-situ Molecular Beam Epitaxy M. Passlack;M. Hong;J.P. Mannaerts;J. Kwo;L.W. Tu
國立中山大學 1991 Vertical-Cavity Top-Surface Emitting Lasers with Thin Ag Mirrors and Hybrid Reflectors M. Hong;L.W. Tu;J. Gamelin;Y.H. Wang;R.J. Fisher;E.F. Schubert;K. Tai;G. Hasnain;J.P. Mannaerts;B.E. Weir;J.D. Wynn;R.F. Kopf;G.J. Zydzik;A.Y. Cho
國立中山大學 1990 Vertical Cavity Surface Emitting Lasers with Semitransparent Metallic Mirrors and High Quantum Efficiencies L.W. Tu;E.F. Schubert;R.F. Kopf;G.J. Zydzik;M. Hong;S.N. Chu;J.P. Mannaerts

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