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机构	日期	题名	作者
中原大學	2005-07	Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs	J. F. Chen;R. S. Hsiao;C. K. Wang;J. S. Wang;J. Y. Chi
國立東華大學	2005	N incorporation into InGaAs cap layer in InAs self-assembled quantum dots	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; P. C. Hsieh; Y. J. Chen; Y. P. Chen; J. S. Wang; J. Y. Chi
國立東華大學	2005	Single mode InAs quantum dot photonic crystal VCSELs	祁錦雲; Jim-Yong Chi; H.P.D. Yang; Y.H. Chang; F.I. Lai; H.C. Yu; Y.J. Hsu; G. Lin; R.S. Hsiao; H.C. Kuo; S.C. Wang ;J.Y. Chi
國立東華大學	2005	Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy	祁錦雲; Jim-Yong Chi; K. P. Chang; S. L. Yang; D. S. Chuu; R. S. Hsiao; J. F. Chen; L. Wei; J. S. Wang; J. Y. Chi
國立東華大學	2005	Singlemode Monolithically Quantum-Dot Vertical-Cavity Surface-Emitting Laser in 1.3 μm with Side-mode Suppression ratio > 30dB	祁錦雲; Jim-Yong Chi; Y.H. Chang; G.R. Lin; H.C. Kuo; J.Y. Chi; S.C. Wang
國立東華大學	2005	Characteristics of Oxide-Implanted Photonic Crystal Vertical-Cavity Surface-Emitting Lasers	祁錦雲; Jim-Yong Chi; H. P. D. Yang; F. I. Lai;Y. H. Chang; H. C. Yu; C. P. Sung; H. C. Kuo; S. C. Wang; S. Y. Lin; J. Y. Chi
國立東華大學	2005	MBE growth of high quality vertically coupled InAs/GaAs quantum dots laser emitting around 1.3um	祁錦雲; Jim-Yong Chi; R. S. Hsiao; J. S. Wang; G. Lin; C. Y. Liang; H. Y. Liu; T.W.Chi; J. F. Chen;J. Y. Chi
國立中山大學	2005	Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x ? 3% grown by molecular beam epitaxy	T.S. Lay;E.Y. Lin;C.Y. Chang;K.M. Kong;L.P. Chen;T.Y. Chang;J.S. Wang;G. Lin;J.Y. Chi
國立東華大學	2004-11-08	Long wavelength VCSEL devices on GaAs substrates	祁錦雲; Jim-Yong Chi; J. Y. Chi; Jyh-Shyang Wang; Jenn-Fang Chen; Tsin-Dong Lee
國立東華大學	2004	The influence of Quantum-dot Period on High Performance InAs/GaAs Quantum0-dot Infrared Photodetectors	祁錦雲; Jim-Yong Chi; S.T. Chou; M. C. Wu; S. Y. Lin; R.S. Hsiao; L.C. Wei; J.S. Wang; J. Y. Chi
國立東華大學	2004	The observatin of Photoluminescence Decay for MBE Grown 1.3 um InGaAsN/GaAs Quantum Well Structure	祁錦雲; Jim-Yong Chi; R.S. Hsiao;C.Y. Liang; S. Y. Lin; J.S. Wang; J.Y. Chi
國立中山大學	2004	High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mm applications grown by molecular beam epitaxy	J.S. Wang;A.R. Kovsh;R.S. Hsiao;L.P. Chen;J.F. Chen;T.S. Lay;J.Y. Chi
國立中山大學	2004	Probing the Electronic Structures of III-V-Nitride Semiconductors by X-ray Photoelectron Spectroscopy	T.S. Lay;W.T. Kuo;L.P. Chen;Y.H. Lai;W.H. Hung;J.S. Wang;J.Y. Chi;D.K. Shih;H.H. Lin
國立東華大學	2003-12	1.3 μm InAs-InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor DBRs	祁錦雲; Jim-Yong Chi; J. S. Wang; N. A. Maleev; A. R. Kovsh; R. S. Hsiao; C. M. Lai; L. Wei; J. F. Chen; J. A. Lott; N. N. Ledentsov; V. M. Ustinov; J. Y. Chi
國立東華大學	2003-12	Long-Wavelength Ridge-Waveguide InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy	祁錦雲; Jim-Yong Chi; J. S. Wang;A. R. Kovsh; R. S. Hsiao; G. Lin; D. A. Livshits; I. F. Chen; Y. T. Wu; L. P. Chen; J. F. Chen; J. Y. Chi
國立東華大學	2003-12	1.3 m InGaAsN Edge Emitting Lasers with Near-Circular Beam Divergence	祁錦雲; Jim-Yong Chi; G. Lin; I. F. Chen;J. S. Wang; R. S. Hsiao; L. Wei;J. Y. Chi; D. A. Livshits; A. R. Kovsh;V. M. Ustinov
國立東華大學	2003-12	Narrow Ridge-waveguide Multi-layer InAs/InGaAs/GaAs Quantum Dot Lasers of 1.3 m m Range	祁錦雲; Jim-Yong Chi; Lin; I. F. Chen; F. J. Lay ;J. Y. Chi
國立東華大學	2003-09	Long wavelength Laser Diodes Based on GaAs" COES'03 The 6th Chinese Optoelectronics Symposium	祁錦雲; Jim-Yong Chi; J. Y. Chi; Y. S. Liu; J. S. Wang
國立東華大學	2003-09	1.3 micron single lateral mode lasers based on InAs QDs and InGaAsN quantum wells	祁錦雲; Jim-Yong Chi; A.R.Kovsh; D.A.Livshits; N.A.Maleev; A.E.Zhukov; V.M.Ustinov; J.S.Wang; R.S.Hsiao; G.Lin; J.Y.Chi; N.N.Ledentsov
國立東華大學	2003-09	Probing the electronic structure of III-V-Nitride semiconductors by X-ray photoelectron spectroscopy	祁錦雲; Jim-Yong Chi; T. S. Lay; W. T. Kuo; L. P. Chen; Y. H. Lai; W. H. Hung; J. S. Wang; J. Y. Chi; D. K. Shih; H. H. Lin; C. M. Chuang; K. H. Chen
國立東華大學	2003-06-23	High-performance Ridge-waveguide Multi-stack (N=2, 5 and 10) InAs/InGaAs/GaAs Quantum Dot Lasers of 1.3 m range	祁錦雲; Jim-Yong Chi; A.R.Kovsh; J.S.Wang; R.S.Hsiao; L.P.Chen; D.A.Livshits; G.Lin; J.Y.Chi; V.M.Ustinov
國立東華大學	2003-06	The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular beam epitaxy	祁錦雲; Jim-Yong Chi; N. V. Kryzhanovskaya; A. G. Gladyshev; D. S. Sizov; A. R. Kovsh; A. F. Tsatsul' nikov; J. Y. Chi; J. S. Wang; L. wei ; V. M. Ustinov
國立東華大學	2003-04	High-performance 1.3 micron single-mode ridge waveguide InAs quantum dot and InGaAsN/GaAs quantum well lasers	祁錦雲; Jim-Yong Chi; V.M.Ustinov; A.R.Kovsh; D.A.Livshits; A.E.Zhukov; J.S.Wang; G.Lin; J.Y.Chi
國立東華大學	2002-12	High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells	祁錦雲; Jim-Yong Chi; R. Kovsh; A. E. Zhukov; N. A. Maleev; S. S. Mikhrin; D. A. Livshits; Y. M. Shernyakov; M. V. Maximov; N. A. Pihtin; I. S. Tarasov;V. M. Ustinov; Zh. I. Alferov; J. S. Wang; L. Wei, G. Lin; J. Y. Chi; N. N. Ledentsov1; D. Bimberg
國立東華大學	2002-12	1.3 m lasers based on InAs/GaAs quantum dots with high optical gain	祁錦雲; Jim-Yong Chi; R. Kovsh; N. A. Maleev; A. E. Zhukov; S. S. Mikhrin; D. A. Livshits; Y. M. Shernyakov; A . 11 V. Sakharov; M. V. Maximov; V. M. Ustinov; Zh. I. Alferov; J. S. Wang; R. S. Shiao; L. Wei; Y. T. Wu; G. Lin; J. Y. Chi; N. N. Ledentsov; D. Bimberg

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