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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
元智大學 2007-03 Tunable Slow Light Using Quantum Dot VCSEL for Subcarrier Multiplexed System 祁甡; P. C. Peng; C. T. Lin; H. C. Kuo; J. N. Liu; W. K. Tsai; G. Lin; H. P. Yang; K. F. Lin; J. Y. Chi; S. C. Wang
國立東華大學 2006 Single-Mode Monolithic Quantum-Dot VCSEL in 1.3um with Sidemode Suppression Ratio Over 30 dB 祁錦雲; Jim-Yong Chi; Y. H. Chang; P. C. Peng; W. K. Tsai; Gray Lin; FangI Lai; R. S. Hsiao; H. P. Yang; H. C. Yu; K. F. Lin; J. Y. Chi; S. C. Wang; and H. C. Kuo
國立東華大學 2006 Dynamic characteristics of long-wavelength quantum dot vertical-cavity surface-emitting lasers with light injection 祁錦雲; Jim-Yong Chi; P. C. Peng; H. C. Kuo; W. K. Tsai; Y. H. Chang; C. T. Lin; S. Chi; S. C. Wang; G. Lin; H. P. Yang;K. F. Lin; H. C. Yu; J. Y. Chi
國立東華大學 2006 Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots 祁錦雲; Jim-Yong Chi; J. F. Chen;R. S. Hsiao; M. F. Hsieh; J. S. Wang; J. Y. Chi
中原大學 2005-09-29 Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling J. F. Chen;R. S. Hsiao;Y. P. Chen;J. S. Wang;J. Y. Chi
中原大學 2005-07 Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs J. F. Chen;R. S. Hsiao;C. K. Wang;J. S. Wang;J. Y. Chi
國立東華大學 2005 N incorporation into InGaAs cap layer in InAs self-assembled quantum dots 祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; P. C. Hsieh; Y. J. Chen; Y. P. Chen; J. S. Wang; J. Y. Chi
國立東華大學 2005 Single mode InAs quantum dot photonic crystal VCSELs 祁錦雲; Jim-Yong Chi; H.P.D. Yang; Y.H. Chang; F.I. Lai; H.C. Yu; Y.J. Hsu; G. Lin; R.S. Hsiao; H.C. Kuo; S.C. Wang ;J.Y. Chi
國立東華大學 2005 Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy 祁錦雲; Jim-Yong Chi; K. P. Chang; S. L. Yang; D. S. Chuu; R. S. Hsiao; J. F. Chen; L. Wei; J. S. Wang; J. Y. Chi
國立東華大學 2005 Singlemode Monolithically Quantum-Dot Vertical-Cavity Surface-Emitting Laser in 1.3 μm with Side-mode Suppression ratio > 30dB 祁錦雲; Jim-Yong Chi; Y.H. Chang; G.R. Lin; H.C. Kuo; J.Y. Chi; S.C. Wang
國立東華大學 2005 Characteristics of Oxide-Implanted Photonic Crystal Vertical-Cavity Surface-Emitting Lasers 祁錦雲; Jim-Yong Chi; H. P. D. Yang; F. I. Lai;Y. H. Chang; H. C. Yu; C. P. Sung; H. C. Kuo; S. C. Wang; S. Y. Lin; J. Y. Chi
國立東華大學 2005 MBE growth of high quality vertically coupled InAs/GaAs quantum dots laser emitting around 1.3um 祁錦雲; Jim-Yong Chi; R. S. Hsiao; J. S. Wang; G. Lin; C. Y. Liang; H. Y. Liu; T.W.Chi; J. F. Chen;J. Y. Chi
國立中山大學 2005 Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x ? 3% grown by molecular beam epitaxy T.S. Lay;E.Y. Lin;C.Y. Chang;K.M. Kong;L.P. Chen;T.Y. Chang;J.S. Wang;G. Lin;J.Y. Chi
國立東華大學 2004-11-08 Long wavelength VCSEL devices on GaAs substrates 祁錦雲; Jim-Yong Chi; J. Y. Chi; Jyh-Shyang Wang; Jenn-Fang Chen; Tsin-Dong Lee
國立東華大學 2004 The influence of Quantum-dot Period on High Performance InAs/GaAs Quantum0-dot Infrared Photodetectors 祁錦雲; Jim-Yong Chi; S.T. Chou; M. C. Wu; S. Y. Lin; R.S. Hsiao; L.C. Wei; J.S. Wang; J. Y. Chi
國立東華大學 2004 The observatin of Photoluminescence Decay for MBE Grown 1.3 um InGaAsN/GaAs Quantum Well Structure 祁錦雲; Jim-Yong Chi; R.S. Hsiao;C.Y. Liang; S. Y. Lin; J.S. Wang; J.Y. Chi
國立中山大學 2004 High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mm applications grown by molecular beam epitaxy J.S. Wang;A.R. Kovsh;R.S. Hsiao;L.P. Chen;J.F. Chen;T.S. Lay;J.Y. Chi
國立中山大學 2004 Probing the Electronic Structures of III-V-Nitride Semiconductors by X-ray Photoelectron Spectroscopy T.S. Lay;W.T. Kuo;L.P. Chen;Y.H. Lai;W.H. Hung;J.S. Wang;J.Y. Chi;D.K. Shih;H.H. Lin
國立東華大學 2003-12 1.3 μm InAs-InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor DBRs 祁錦雲; Jim-Yong Chi; J. S. Wang; N. A. Maleev; A. R. Kovsh; R. S. Hsiao; C. M. Lai; L. Wei; J. F. Chen; J. A. Lott; N. N. Ledentsov; V. M. Ustinov; J. Y. Chi
國立東華大學 2003-12 Long-Wavelength Ridge-Waveguide InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy 祁錦雲; Jim-Yong Chi; J. S. Wang;A. R. Kovsh; R. S. Hsiao; G. Lin; D. A. Livshits; I. F. Chen; Y. T. Wu; L. P. Chen; J. F. Chen; J. Y. Chi
國立東華大學 2003-12 1.3 m InGaAsN Edge Emitting Lasers with Near-Circular Beam Divergence 祁錦雲; Jim-Yong Chi; G. Lin; I. F. Chen;J. S. Wang; R. S. Hsiao; L. Wei;J. Y. Chi; D. A. Livshits; A. R. Kovsh;V. M. Ustinov
國立東華大學 2003-12 Narrow Ridge-waveguide Multi-layer InAs/InGaAs/GaAs Quantum Dot Lasers of 1.3 m m Range 祁錦雲; Jim-Yong Chi; Lin; I. F. Chen; F. J. Lay ;J. Y. Chi
國立東華大學 2003-09 Long wavelength Laser Diodes Based on GaAs" COES'03 The 6th Chinese Optoelectronics Symposium 祁錦雲; Jim-Yong Chi; J. Y. Chi; Y. S. Liu; J. S. Wang
國立東華大學 2003-09 1.3 micron single lateral mode lasers based on InAs QDs and InGaAsN quantum wells 祁錦雲; Jim-Yong Chi; A.R.Kovsh; D.A.Livshits; N.A.Maleev; A.E.Zhukov; V.M.Ustinov; J.S.Wang; R.S.Hsiao; G.Lin; J.Y.Chi; N.N.Ledentsov
國立東華大學 2003-09 Probing the electronic structure of III-V-Nitride semiconductors by X-ray photoelectron spectroscopy 祁錦雲; Jim-Yong Chi; T. S. Lay; W. T. Kuo; L. P. Chen; Y. H. Lai; W. H. Hung; J. S. Wang; J. Y. Chi; D. K. Shih; H. H. Lin; C. M. Chuang; K. H. Chen

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