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| 國立成功大學 |
2000-09-01 |
A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted delta-doped heterostructure field-effect transistor
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Lee, Ching-Sung; Hsu, Wei-Chou; Shieh, Hir-Ming; Su, Jan-Shing; Jain, Shin-Yuh; Lin, Wei |
| 國立成功大學 |
1998-06 |
High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In0.34Al0.66As0.85Sb0.15 Schottky layer
|
Su, Jan-Shing; Hsu, Wei-Chou; Lin, Wei; Jain, Shin-Yuh |
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