|
|
???tair.name??? >
???browser.page.title.author???
|
"jang sm"???jsp.browse.items-by-author.description???
Showing items 1-25 of 26 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
| 國立交通大學 |
2019-04-02T05:59:49Z |
Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition process
|
Lin, YM; Jang, SM; Yu, CH; Lei, TF |
| 國立交通大學 |
2019-04-02T05:59:45Z |
Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide
|
Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY |
| 國立交通大學 |
2014-12-08T15:44:39Z |
A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
|
Yang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
|
Wu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
|
Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
|
Wu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides
|
Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:46Z |
Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
|
Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane
|
Chiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films
|
Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:31Z |
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contents
|
Chiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier
|
Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2
|
Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane
|
Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers
|
Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:40Z |
TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier
|
Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:37:21Z |
Effects of O-2- and N-2-plasma treatments on copper surface
|
Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
|
Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:57Z |
Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs
|
Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides
|
Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Barrier characteristics of PECVD alpha-SiC : H dielectrics
|
Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:29Z |
TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
|
Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:16Z |
Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier
|
Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:18:36Z |
Visible cascade emission and quantum efficiency in rare earth-activated fluoride phosphors
|
Tung, CY; Chen, TM; Lee, TJ; Tzeng, HY; Jang, SM |
| 國立交通大學 |
2014-12-08T15:01:39Z |
Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide
|
Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY |
Showing items 1-25 of 26 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
|
