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Showing items 21-26 of 26 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:26:48Z |
Barrier characteristics of PECVD alpha-SiC : H dielectrics
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Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:29Z |
TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:16Z |
Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:18:36Z |
Visible cascade emission and quantum efficiency in rare earth-activated fluoride phosphors
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Tung, CY; Chen, TM; Lee, TJ; Tzeng, HY; Jang, SM |
| 國立交通大學 |
2014-12-08T15:01:39Z |
Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide
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Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY |
| 國立交通大學 |
2014-12-08T15:01:34Z |
Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition process
|
Lin, YM; Jang, SM; Yu, CH; Lei, TF |
Showing items 21-26 of 26 (2 Page(s) Totally)
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