|
English
|
正體中文
|
简体中文
|
0
|
|
???header.visitor??? :
52485220
???header.onlineuser??? :
1199
???header.sponsordeclaration???
|
|
|
|
???tair.name??? >
???browser.page.title.author???
|
"jang wy"???jsp.browse.items-by-author.description???
Showing items 1-6 of 6 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:18:59Z |
Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
|
Liu, CY; Wu, PH; Wang, A; Jang, WY; Young, JC; Chiu, KY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:17:34Z |
Memory effect of sol-gel derived V-doped SrZrO3 thin films
|
Liu, CY; Chuang, CC; Chen, JS; Wang, A; Jang, WY; Young, JC; Chiu, KY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:17:04Z |
Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
|
Liu, CY; Wang, A; Jang, WY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:06:00Z |
GENERAL EXPERIMENTAL-METHOD OF PARAMETER EXTRACTION FOR CMOS TIMING MACROMODELS
|
WU, CY; JANG, WY; WU, HJ |
| 國立交通大學 |
2014-12-08T15:05:57Z |
A NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFET
|
JANG, WY; WU, CY; WU, HJ |
| 國立交通大學 |
2014-12-08T15:05:35Z |
MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS
|
WU, CY; JANG, WY; LIU, ID |
Showing items 1-6 of 6 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
