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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:18:59Z |
Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
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Liu, CY; Wu, PH; Wang, A; Jang, WY; Young, JC; Chiu, KY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:17:34Z |
Memory effect of sol-gel derived V-doped SrZrO3 thin films
|
Liu, CY; Chuang, CC; Chen, JS; Wang, A; Jang, WY; Young, JC; Chiu, KY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:17:04Z |
Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
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Liu, CY; Wang, A; Jang, WY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:06:00Z |
GENERAL EXPERIMENTAL-METHOD OF PARAMETER EXTRACTION FOR CMOS TIMING MACROMODELS
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WU, CY; JANG, WY; WU, HJ |
| 國立交通大學 |
2014-12-08T15:05:57Z |
A NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFET
|
JANG, WY; WU, CY; WU, HJ |
| 國立交通大學 |
2014-12-08T15:05:35Z |
MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS
|
WU, CY; JANG, WY; LIU, ID |
Showing items 1-6 of 6 (1 Page(s) Totally)
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