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Showing items 26-37 of 37  (2 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2002-11-29 Molecular Dynamics Simulations on Nanoscale Impact Dynamics at Low Incident Energies Chi-Chuan Hwang;Jee-Gong Chang;Shin-Pon Ju;Ming-Horng Su;Jian-Ming Lu
國立中山大學 2002 Molecular Dynamics Simulation of Thin Film Growth on Giant Magnetoresistance Corrugated Structures Cheng-I Weng; Chi-Chuan Hwang; Chia-Lin Chang; Jee-Gong Chang; Shin-Pon Ju
國立中山大學 2002 A molecular dynamics study of deposition rate dependence of film morphology in the sputtering process Shin-Pon Ju; Cheng-I Weng; Jee-Gong Chang; Chi-Chuan Hwang
國立中山大學 2002 Incident Ion Characteristics in Ionized Physical Vapor Deposition Using Molecular Dynamics Simulation Chi-Chuan Hwang; G.J. Hwang; Shin-Pon Ju; Jee-Gong Chang
國立中山大學 2002 A Study of Argon Characteristic in Ionized Physical Vapor Deposition Using Molecular Dynamics Simulation Chi-Chuan Hwang; G.J. Hwang; Jee-Gong Chang; Shin-Pon Ju
國立中山大學 2002 Molecular dynamics simulation of sputter trench-filling morphology in Damascene process Shin-Pon Ju; Cheng-I Weng; Jee-Gong Chang; Chi-Chuan Hwang
國立中山大學 2002 Molecular dynamics simulation of copper reflow in damascene process Ming-Horng Su; Chi-Chuan Hwang; Jee-Gong Chang; Shin-Pon Ju
國立中山大學 2002 Damascene Process Simulation Using Molecular Dynamics Parallel Computing Technique: Quantitative Comparison to a Small Size Simulation Model Shin-Pon Ju;Cheng-I Weng;Jee-Gong Chang;Chi-Chuan Hwang;Yng-Ching Wu;Hong-Chang Lin
國立中山大學 2001-08 Molecular Dynamics Simulation of Sputter Trench-filling Morphology in Damascene Process Chi-Chuan Hwang;Shin-Pon Ju;Jee-Gong Chang;Cheng-I Weng;Jian-Ming Lu
國立中山大學 2001 Topographic study of sputter-deposited film with different process parameters Shin-Pon Ju; Cheng-I Weng; Jee-Gong Chang; Chi-Chuan Hwang
國立中山大學 2001 Thin Film Grown on GMR Corrugated Substrate by Oblique Deposition Using Molecular Dynamics Simulation Cheng-I Weng;Chia-Lin Chang;Jee-Gong Chang;Shin-Pon Ju;Chi-Chuan Hwang;Jian-Ming Lu
國立中山大學 2000 The morphologic study of deposited film with different process parameters in sputtering process Shin-Pon Ju;Cheng-I Weng;Jee-Gong Chang;Chi-Chuan Hwang

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