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Showing items 1-46 of 46  (1 Page(s) Totally)
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Institution Date Title Author
元智大學 Nov-21 High Quality InAs/GaSb Type II Superlattices Grown by Molecular Beam Epitaxy Tsun-Jie Ko; Jen-Inn Chyi; Wei-Sheng Liu
元智大學 Jan-24 The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates Samatcha Voranthamrong; Chao-Chia Cheng; Tzu-Wei Lo; Zhen-Lun Li; Chun-Nien Liu; Chun-De Chiang; Li-Wei Hung; Ming-Sen Hsu; Wei-Sheng Liu; Jen-Inn Chyi; Charles W. Tu
元智大學 Dec-21 Influence of growth temperature of InAs/GaSb Type II Superlattice Infrared Photodetector prepared using Molecular Beam Epitaxy Guan-Ru Chen; Wei-Sheng Liu; Po-Hao Chang; Balaji G; Tsun-Jie Ko,; Ming-En Syu; Jen-Inn Chyi
元智大學 Dec-14 Quantum control study of ultrafast optical responses in semiconductor quantum dot devices Jung-Y. Huang; Chien-Y. Lin; Wei-Sheng Liu; Jen-Inn Chyi
元智大學 Aug-19 Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure Wei-Sheng Liu; Ting-Kai Yang; Wei-Jen Hsueh; Jen-Inn Chyi; Tien-Yuan Huang; Ming-En Hsu
元智大學 2023-12-01 InAs Quantum Dots with Emission Wavelength of 1.38 μm Grown by Molecular Beam Epitaxy on GaAs Substrates Pin-Chih Liu; Kai-Yang Hsu; Bhavya Kondapavuluri; Jhih-Han Lin; Hou-Yi Chen; Balaji G; Wei-Sheng Liu; Jen-Inn Chyi
元智大學 2023-12-01 Impact of V/III Ratio for the InAs Layer in the SWIR Type-II Superlattices Grown by Molecular Beam Epitaxy Yung-Jyun Liao; Hou-Yi Chen; Balaji G; Pin-Chih Liu; Wei-Sheng Liu; Jen-Inn Chyi
元智大學 2023-12-01 Bandgap engineering of GaAsSb/InGaAs MQW with and without strain compensation for 1 μm Charles W. Tu; Zhen-Lun Li; Tzu-Wei Lo; Chun-Nien Liu; Chun-De Chiang; Li-Wei Hung; Ming-Sen Hsu; Wei-Sheng Liu; Jen-Inn Chyi; Chao-Jia Cheng
元智大學 2023-10-19 X-ray Diffraction Studies on InGaAs/GaAsSb with and without GaAsP Straincompensating Layers Tzu-Wei Lo; Zhen-Lun Li; Chao-Chia Cheng; Chun-Nien Liu; Chun-De Chiang; Li-Wei Hung; Ming-Sen Hsu; Wei-Sheng Liu; Jen-Inn Chyi; Charles W. Tu
元智大學 2023-06-28 The Effects of Strain Compensation in Type-II InGaAs/GaAsSb Quantum Wells Grown on GaAs(001) Substrates Samatcha Voranthamrong; Sau-Jia Cheng; Tzi-Wei Luo; Chen-Lun Lee; Chun-Nien Liu; Chun-De Chiang; Li-Wei Hung; Ming-Sen Hsu; Wei-Sheng Liu; Jen-Inn Chyi; Charles W. Tu
元智大學 2023-06-28 The Effects of Strain Compensation in Type-II InGaAs/GaAsSb Quantum Wells Grown on GaAs(001) Substrates Samatcha Voranthamrong; Sau-Jia Cheng; Tzi-Wei Luo; Chen-Lun Lee; Chun-Nien Liu; Chun-De Chiang; Li-Wei Hung; Ming-Sen Hsu; Wei-Sheng Liu; Jen-Inn Chyi; Charles W. Tu
元智大學 2022-12-02 Optimization of the growth temperature and periods for improving the optical properties of SWIR Type-II super lattice for Infrared Photodetectors Yung-Jyun Liao; Hou-Yi Chen; Pin-Chih Liu; Balaji G; Kai-Yang Hsu; Wei-Sheng Liu; Jen-Inn Chyi
元智大學 2022-12 Optimization of the growth temperature and periods for improving the optical properties of SWIR Type-II super lattice for Infrared Photodetectors Yung-Jyun Liao; Wei-Sheng Liu; Hou-Yi Chen; Pin-Chih Liu; Balaji. G; Kai-Yang Hsu; Jen-Inn Chyi
臺大學術典藏 2021-03-15T08:46:55Z Study of protein-peptide binding affinity using AlGaN/GaN high electron mobility transistors Chih-Cheng Huang; Geng-Yen Lee; Jen-Inn Chyi; HUI-TENG CHENG; Chen-Pin Hsu; You-Ren Hsu; Fan Ren; Yu-Lin Wang
臺大學術典藏 2021-03-15T08:46:55Z Elucidation of dissociation constants and binding sites of antibody-antigen complex using AlGaN/GaN high electron mobility transistors Chih-Cheng Huang; Chen-Pin Hsu; You-Ren Hsu; Yu-Lin Wang; Geng-Yen Lee; Jen-Inn Chyi; HUI-TENG CHENG; Fan Ren
臺大學術典藏 2021-03-15T08:46:53Z AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study Chih-Cheng Huang; Geng-Yen Lee; Jen-Inn Chyi; HUI-TENG CHENG; Chen-Pin Hsu; You-Ren Hsu; hia-Hsien Hsu; Yu-Fen Huang; Yuh-Chang Sun; Chih-Chen Chen; Sheng-Shian Li; Andrew Yeh J.; Da-Jeng Yao; Fan Ren; Yu-Lin Wang
臺大學術典藏 2021-03-15T08:46:53Z Identification of the amount of binding sites and dissociation constants of a ligand-receptor complex using AlGaN/GaN high electron mobility transistors Chih-Cheng Huang; Geng-Yen Lee; Jen-Inn Chyi; HUI-TENG CHENG; Chen-Pin Hsu; Yu-Fen Huang; Yu-Lin Wang
元智大學 2020/12/3 Development of an InAs/InSb/AlSb Type II Superlattice Short-Wavelength Infrared Photodetector Po-Hao Chang; Wei-Sheng Liu; Tsun-Jie Ko; Ming-En Syu; Jen-Inn Chyi
元智大學 2020/12/3 Enhancement of Optical Properties of InAs/InSb/AlSb Type II superlattices by thermal annealing process Kai-Yang Hsu; Wei-Sheng Liu; Po-Hao Chang; Tsun-Jie Ko; Ming-En Syu; Jen-Inn Chyi
元智大學 2019-12-05 Investigation of InAs submonolayer quantum-dot solar cell with InGaAs/GaAsSb dot-in-a-double-well structure Wei-Sheng Liu; Ting-Kai Yang; Yi-Miao Hua; Kai-Chun Ma; Jen-Inn Chyi
元智大學 2019-05-27 Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure Wei-Sheng Liu; Ting-Kai Yang; Jen-Inn Chyi; Po-hao Chang; Ming-En Hsu
元智大學 2018-12-06 The optical properties of InAs submonolayer quantum dots with GaAsSb capping layer Wei-Sheng Liu; Ting-Kai Yang; Jen-Inn Chyi
元智大學 2012-12-06 Improvement of optical characteristics of InAs/InGaAsSb quantum dot structures with long excited-state emission at 1.31 μm Hsin-Lun Tseng; Wei-Sheng Liu; Po-Chen Kuo; Tien-Hao Huang; Ting-Fu Chu; Jen-Inn Chyi
元智大學 2012-12-06 Improving the optical properties of vertically aligned InAs/GaAsSb quantum dot structure by thermal annealing Ting-Fu Chu; Wei-Sheng Liu; Tien-Hao Huang; Po-Chen Kuo; Hsin-Lun Tseng; Jen-Inn Chyi
元智大學 2012-12-06 Improvement of optical characteristics of InAs/InGaAsSb quantum dot structures with long excited-state emission at 1.31 μm Hsin-Lun Tseng; Wei-Sheng Liu; Po-Chen Kuo; Tien-Hao Huang; Ting-Fu Chu; Jen-Inn Chyi
元智大學 2012-12-06 Improving the optical properties of vertically aligned InAs/GaAsSb quantum dot structure by thermal annealing Ting-Fu Chu; Wei-Sheng Liu; Tien-Hao Huang; Po-Chen Kuo; Hsin-Lun Tseng; Jen-Inn Chyi
元智大學 2012-10 Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure Wei-Sheng Liu; Hong-Ming Wu; Fu-Hsiang Tsao; Tsan-Lin Hsu; Jen-Inn Chyi
元智大學 2012-10 Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure Wei-Sheng Liu; Hong-Ming Wu; Fu-Hsiang Tsao; Tsan-Lin Hsu; Jen-Inn Chyi
元智大學 2012-08-12 Characteristic improvements of vertically aligned columnar quantum dot solar cell with a GaAsSb capping layer Wei-Sheng Liu; Hsin-Lun Tseng; Tien-Hao Huang; Ting-Fu Chu; Po-Chen Kuo; Fu-Hsiang Tsao; Jen-Inn Chyi
元智大學 2012-08-12 Characteristic improvements of vertically aligned columnar quantum dot solar cell with a GaAsSb capping layer Wei-Sheng Liu; Hsin-Lun Tseng; Tien-Hao Huang; Ting-Fu Chu; Po-Chen Kuo; Fu-Hsiang Tsao; Jen-Inn Chyi
元智大學 2012-08 Characteristic improvements of vertically aligned columnar quantum dot solar cell with a GaAsSb capping layer Wei-Sheng Liu; Hsin-Lun Tseng; Tien-Hao Huang; Ting-Fu Chu; Po-Chen Kuo; Fu-Hsiang Tsao; Jen-Inn Chyi
元智大學 2012-08 Characteristic improvements of vertically aligned columnar quantum dot solar cell with a GaAsSb capping layer Wei-Sheng Liu; Hsin-Lun Tseng; Tien-Hao Huang; Ting-Fu Chu; Po-Chen Kuo; Fu-Hsiang Tsao; Jen-Inn Chyi
元智大學 2012-08 Characteristic improvements of vertically aligned columnar quantum dot solar cell with a GaAsSb capping layer Wei-Sheng Liu; Hsin-Lun Tseng; Tien-Hao Huang; Ting-Fu Chu; Po-Chen Kuo; Fu-Hsiang Tsao; Jen-Inn Chyi
元智大學 2011-12-08 Carrier Lifetime Investigation in Type-II Vertical Aligned InAs Quantum Dot Structure with a GaAsSb Strain-Reducing Layer Wei-Sheng Liu; Yen-Ting Wang; Jen-Inn Chyi
元智大學 2011-12-08 Carrier Lifetime Investigation in Type-II Vertical Aligned InAs Quantum Dot Structure with a GaAsSb Strain-Reducing Layer Wei-Sheng Liu; Yen-Ting Wang; Jen-Inn Chyi
元智大學 2011-12-08 Enhancement of intermediate band solar cell by applying vertically aligned InAs/GaAsSb quantum dot structure Wei-Sheng Liu; Hong-Ming Wu; Fu-Hsiang Tsao; Tsan-Lin Hsu; Yu-Ann Liao; Jen-Inn Chyi
義守大學 2011-07 The impact of trimethylindium treatment time during growth interruption on thecarrier dynamics of InGaN/GaN multiple quantum wells Shih-Wei Feng;Hung-Cheng Lin;Jen-Inn Chyi;Chin-Yi Tsai;C.J. Huang;Hsiang-Chen Wang;Fann-Wei Yang;Yen-Sheng Lin
元智大學 2011-05 High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers Wei-Sheng Liu; Hong-Ming Wu; Yu-Ann Liao; Jen-Inn Chyi; Wen-Yen Chen; Tzu-Min Hsu
元智大學 2011-05 Enhancement of intermediate band solar cell by vertically aligned InAs/GaAsSb quantum dots Wei-Sheng Liu; Hong-Ming Wu; Tsan-Lin Hsu; Fu-Hsiang Tsao; Yu-Ann Liao; Jen-Inn Chyi
元智大學 2010-12 Enhancement of Dot Size Uniformity in Vertically Aligned InAs/GaAsSb Structure Hong-Ming Wu; Wei-Sheng Liu; Tsan-Lin Hsu; Yen-Ting Wang; Jen-Inn Chyi
元智大學 2010-12 High Optical Property Vertical Aligned InAs Quantum Dot Structures with GaAsSb Overgrown Layers Wei-Sheng Liu; Hong-Ming Wu; Fu-Hsiang Tsao; Yu-Ann Liao; Jen-Inn Chyi; Wen-Yen Chen; Tzu-Min Hsu
元智大學 2010-08 High Optical Property Vertically Aligned InAs Quantum Dot Structures with GaAsSb Overgrown Layers Wei-Sheng Liu; Hong-Ming Wu; Yu-Ann Liao; Jen-Inn Chyi; Wen-Yean Chen; Tzu-Min Hsu
中原大學 2010-01 Fabrication study of AlN solar-blind MSM photodetectors grown by low-temperature deposition Meei-Ru Chen; S. H. Chang; Tzu Chieh Chen; Chih-Hsiang Hsu; H. L. Kao; Jen-Inn Chyi
中原大學 2005-05 Investigation of Layered Structure SAW Devices Fabricated Using Low Temperature Grown AlN Thin Film on GaN/Sapphire Hui-Feng Lin;Chun-Te Wu;Wei-Cheng Chien;Sheng-Wen Chen;Hui-Ling Kao;Jen-Inn Chyi;Jyh-Shin Chen
國立臺灣海洋大學 2000-06-19 Mechanism of luminescence in InGaN/GaN multiple quantum wells H. C. Yang;P. F. Kuo;T. Y. Lin;Y. F. Ch en;K. H. Chen;L. C. Chen;Jen-Inn Chyi
國立中山大學 1994 新型高速電子元件之分子束磊晶成長與製作 綦振瀛; Jen-Inn Chyi

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