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Institution Date Title Author
臺大學術典藏 2021-03-15T08:46:53Z AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study Chih-Cheng Huang; Geng-Yen Lee; Jen-Inn Chyi; HUI-TENG CHENG; Chen-Pin Hsu; You-Ren Hsu; hia-Hsien Hsu; Yu-Fen Huang; Yuh-Chang Sun; Chih-Chen Chen; Sheng-Shian Li; Andrew Yeh J.; Da-Jeng Yao; Fan Ren; Yu-Lin Wang
臺大學術典藏 2021-03-15T08:46:53Z Identification of the amount of binding sites and dissociation constants of a ligand-receptor complex using AlGaN/GaN high electron mobility transistors Chih-Cheng Huang; Geng-Yen Lee; Jen-Inn Chyi; HUI-TENG CHENG; Chen-Pin Hsu; Yu-Fen Huang; Yu-Lin Wang
元智大學 2020/12/3 Development of an InAs/InSb/AlSb Type II Superlattice Short-Wavelength Infrared Photodetector Po-Hao Chang; Wei-Sheng Liu; Tsun-Jie Ko; Ming-En Syu; Jen-Inn Chyi
元智大學 2020/12/3 Enhancement of Optical Properties of InAs/InSb/AlSb Type II superlattices by thermal annealing process Kai-Yang Hsu; Wei-Sheng Liu; Po-Hao Chang; Tsun-Jie Ko; Ming-En Syu; Jen-Inn Chyi
元智大學 2019-12-05 Investigation of InAs submonolayer quantum-dot solar cell with InGaAs/GaAsSb dot-in-a-double-well structure Wei-Sheng Liu; Ting-Kai Yang; Yi-Miao Hua; Kai-Chun Ma; Jen-Inn Chyi
元智大學 2019-05-27 Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure Wei-Sheng Liu; Ting-Kai Yang; Jen-Inn Chyi; Po-hao Chang; Ming-En Hsu
元智大學 2018-12-06 The optical properties of InAs submonolayer quantum dots with GaAsSb capping layer Wei-Sheng Liu; Ting-Kai Yang; Jen-Inn Chyi
元智大學 2012-12-06 Improvement of optical characteristics of InAs/InGaAsSb quantum dot structures with long excited-state emission at 1.31 μm Hsin-Lun Tseng; Wei-Sheng Liu; Po-Chen Kuo; Tien-Hao Huang; Ting-Fu Chu; Jen-Inn Chyi
元智大學 2012-12-06 Improving the optical properties of vertically aligned InAs/GaAsSb quantum dot structure by thermal annealing Ting-Fu Chu; Wei-Sheng Liu; Tien-Hao Huang; Po-Chen Kuo; Hsin-Lun Tseng; Jen-Inn Chyi
元智大學 2012-12-06 Improvement of optical characteristics of InAs/InGaAsSb quantum dot structures with long excited-state emission at 1.31 μm Hsin-Lun Tseng; Wei-Sheng Liu; Po-Chen Kuo; Tien-Hao Huang; Ting-Fu Chu; Jen-Inn Chyi

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