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机构 日期 题名 作者
國立成功大學 2019-11 Analog Resistive Switching and Synaptic Functions in WOx/TaOx Bilayer through Redox-Induced Trap-Controlled Conduction Chen;Wei-Ju;Cheng;Chia-Hao;Lin;Pei-En;Tseng;Yi-Ting;Chang;Ting-Chang;Chen;Jen-Sue
國立成功大學 2018-08 Effects of interfacial tension and molecular dipole moment on the electrical characteristics of low-voltage-driven organic electronic devices Wu;Fu-Chiao;Yeh;Bo-Liang;Chou;Tzu-Hsiu;Chen;Jen-Sue;Cheng;Horng-Long;Chou;Wei-Yang
國立成功大學 2018-04-30 Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio Li;Jeng-Ting;Tsai;Ho-Lin;Lai;Wei-Yao;Hwang;Weng-Sing;Chen;In-Gann;Chen;Jen-Sue
國立成功大學 2018-02 Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory Chiang;Yen-Chang;Hsiao;Yang-Hsuan;Li;Jeng-Ting;Chen;Jen-Sue
國立成功大學 2017-12 Influences of top electrode reduction potential and operation ambient on the switching characteristics of tantalum oxide resistive switching memories Ding;Tse-Ming;Chen;Yi-Ju;Jeng;Jiann-Shing;Chen;Jen-Sue
國立成功大學 2017-01-9 Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor Li;Jeng-Ting;Liu;Li-Chih;Chen;Jen-Sue;Jeng;Jiann-Shing;Liao;Po-Yung;Chiang;Hsiao-Cheng;Chang;Ting-Chang;Nugraha;Insan, Mohamad;Loi;Antonietta, Maria

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