臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
國立成功大學	2021-12	Halide perovskite for low-power consumption neuromorphic devices	Raifuku;Itaru;Chao;Yung-Pin;Chen;Hong-Hsueh;Lin;Chen-Fu;Lin;Pei-En;Shih;Li-Chung;Chen;Kuan-Ting;Chen;Jung-Yao;Chen;Jen-Sue;Chen;Peter
國立成功大學	2021-07-5	Epitaxial, Energetic, and Morphological Synergy on Photocharge Collection of the Fe2TiO5/ZnO Nanodendrite Heterojunction Array Photoelectrode for Photoelectrochemical Water Oxidation	Ho;Wing-Kwan;Chen;Jen-Sue;Wu;Jih-Jen
國立成功大學	2021-02-3	Efficacious CO2 Photoconversion to C-2 and C-3 Hydrocarbons on Upright SnS-SnS2 Heterojunction Nanosheet Frameworks	Wu;Chun-Yuan;Lee;Chia-Ju;Yu;Yi-Hsing;Tsao;Hui-Wen;Su;Yen-Hsun;Kaun;Chao-Cheng;Chen;Jen-Sue;Wu;Jih-Jen
國立成功大學	2020-11-26	Violet-light stimulated synaptic and learning functions in a zinc-tin oxide photoelectric transistor for neuromorphic computation	Lin;Ting-Ruei;Shih;Li-Chung;Cheng;Po-Jen;Chen;Kuan-Ting;Chen;Jen-Sue
國立成功大學	2020-07-28	Charge Trapping Augmented Switchable Sub-band-gap Photoresponse of Zinc-Tin Oxide Thin-Film Transistor	Hsiao;Yang-Hsuan;Leung;Tak-Pui;Li;Jeng-Ting;Shih;Li-Chung;Chen;Jen-Sue
國立成功大學	2019-11	Analog Resistive Switching and Synaptic Functions in WOx/TaOx Bilayer through Redox-Induced Trap-Controlled Conduction	Chen;Wei-Ju;Cheng;Chia-Hao;Lin;Pei-En;Tseng;Yi-Ting;Chang;Ting-Chang;Chen;Jen-Sue
國立成功大學	2018-08	Effects of interfacial tension and molecular dipole moment on the electrical characteristics of low-voltage-driven organic electronic devices	Wu;Fu-Chiao;Yeh;Bo-Liang;Chou;Tzu-Hsiu;Chen;Jen-Sue;Cheng;Horng-Long;Chou;Wei-Yang
國立成功大學	2018-04-30	Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio	Li;Jeng-Ting;Tsai;Ho-Lin;Lai;Wei-Yao;Hwang;Weng-Sing;Chen;In-Gann;Chen;Jen-Sue
國立成功大學	2018-02	Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory	Chiang;Yen-Chang;Hsiao;Yang-Hsuan;Li;Jeng-Ting;Chen;Jen-Sue
國立成功大學	2017-12	Influences of top electrode reduction potential and operation ambient on the switching characteristics of tantalum oxide resistive switching memories	Ding;Tse-Ming;Chen;Yi-Ju;Jeng;Jiann-Shing;Chen;Jen-Sue

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