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"jeng m j"的相關文件
顯示項目 11-20 / 23 (共3頁)
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| 臺大學術典藏 |
2009-02-24T03:49:30Z |
Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide
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Tu, Y. K.; Wang, Way-Seen; Hwu, Jenn-Gwo; Hwu, Jenn-Gwo; Wang, Way-Seen; Tu, Y. K.; Jeng, M. J.; 胡振國; Jeng, M. J.; 王維新; Tu, Y. K. |
| 淡江大學 |
2008 |
Measurement of RF PCB Dielectric Properties and Losses
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Chou, Yun-Hsih; Jeng, M.-J.; Lee, Yang-Han; Jan, Yih-Guang |
| 國立臺灣大學 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
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胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 臺大學術典藏 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
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Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994 |
Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides
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胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; Lin, H. S. |
| 臺大學術典藏 |
1994 |
Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides
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Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1993 |
Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters
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胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 臺大學術典藏 |
1993 |
Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters
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Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1988 |
C-V Hysteresis Instability in Aluminum/Tantalum Oxide/Silicon Oxide/ Silicon Capacitors Due to Postmetallization Annealing and Co-60 Irradiation
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胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1987 |
Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide
|
胡振國; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo; Jeng, M. J.; Wang, Way-Seen; Tu, Y. K. |
顯示項目 11-20 / 23 (共3頁)
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