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Institution Date Title Author
臺大學術典藏 2018-09-10T06:57:01Z Application of anodization followed by rapid thermal treatment to thin gate oxide growth Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:01Z C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation Hwu, Jenn-Gwo;Jeng, Ming-Jer; Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:00Z Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU
淡江大學 2010-06 Noise Mitigation Capability Comparison: Power Bus Isolation vs. Power Plane Segmentation Chou, Yun-Hsih; Jeng, Ming-Jer; Tsai, Ming-Chang; Lee, Yang-Han; Jan, Yih-Guang
國立臺灣大學 1999 Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo
國立臺灣大學 1996 Rapid thermal post-metallization annealing effect on thin gate oxides Jeng, Ming-Jer; Lin, Huang-Shen; Hwu, Jenn-Gwo

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