|
English
|
正體中文
|
简体中文
|
总笔数 :0
|
|
造访人次 :
51798636
在线人数 :
979
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"jeng ming jer"的相关文件
显示项目 1-6 / 6 (共1页) 1 每页显示[10|25|50]项目
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Application of anodization followed by rapid thermal treatment to thin gate oxide growth
|
Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation
|
Hwu, Jenn-Gwo;Jeng, Ming-Jer; Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation
|
Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 淡江大學 |
2010-06 |
Noise Mitigation Capability Comparison: Power Bus Isolation vs. Power Plane Segmentation
|
Chou, Yun-Hsih; Jeng, Ming-Jer; Tsai, Ming-Chang; Lee, Yang-Han; Jan, Yih-Guang |
| 國立臺灣大學 |
1999 |
Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
|
Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Rapid thermal post-metallization annealing effect on thin gate oxides
|
Jeng, Ming-Jer; Lin, Huang-Shen; Hwu, Jenn-Gwo |
显示项目 1-6 / 6 (共1页) 1 每页显示[10|25|50]项目
|