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Showing items 1-8 of 8  (1 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 2005 Influence of d-doped sheet on DC performances of InP/InGaAs heterojunction bipolar transistors Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen;King-Poul Z; 蔡榮輝
國立高雄師範大學 2005 Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch Jung-Hui Tsai;Ying-Cheng Chu;Shao-Yen Chiu;King-Poul Zhu;Yu-Jui Chu;Jeng-Shyan Chen; 蔡榮輝
國立高雄師範大學 2005 Design consideration of δ-doping channels for high-performance n+-GaAs/p+-InGaP/n-GaAs camel-gate field effect transistors Jung-Hui Tsai;Jeng-Shyan Chen;Yu-Jui Chu; 蔡榮輝
國立高雄師範大學 2004 Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen;King-Poul Zhu; 蔡榮輝
國立高雄師範大學 2003 InP/GaInAs d-doped heterojunction bipolar transistors with high current gain, low offset voltage Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen; 蔡榮輝
國立高雄師範大學 2003 A modeling approach to high-performance InGaP/GaAs camel-gate δ-doping field effect transistors Jung-Hui Tsai;Jeng-Shyan Chen;Yu-Jui Chu; 蔡榮輝
國立高雄師範大學 2002 High-Linearity InGaP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) with Camel-Gate Structure Jung-Hui Tsai;Jeng-Shyan Chen; 蔡榮輝
國立高雄師範大學 2002 d-Doping Field-Effect Transistors with an InGaP/GaAs Camel-Gate Structures Jung-Hui Tsai;Jeng-Shyan Chen;Yu-Jui Chu; 蔡榮輝

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