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Institution Date Title Author
國立交通大學 2014-12-08T15:43:49Z Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:43:48Z Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric Wu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:43:48Z Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:26:48Z Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:26:48Z Barrier characteristics of PECVD alpha-SiC : H dielectrics Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS

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