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Showing items 1-10 of 10  (1 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T09:25:19Z Ga2O3/GaN single nanowire MOSFET with cut-off frequency ~150GHz Jeng-Wei Yu,;Chi-Kang Li,;Po-Chun Yeh,;Yuh-Renn Wu,;Lung-Han Peng,; Jeng-Wei Yu,; Chi-Kang Li,; Po-Chun Yeh,; Yuh-Renn Wu,; Lung-Han Peng,; LUNG-HAN PENG
臺大學術典藏 2018-09-10T09:25:19Z Ga2O3/GaN single nanowire MOSFET with cut-off frequency ~150GHz Jeng-Wei Yu,;Chi-Kang Li,;Po-Chun Yeh,;Yuh-Renn Wu,;Lung-Han Peng,; Jeng-Wei Yu,; Chi-Kang Li,; Po-Chun Yeh,; Yuh-Renn Wu,; Lung-Han Peng,; LUNG-HAN PENG
臺大學術典藏 2018-09-10T09:25:19Z Study on 50nm Gate Length of Ga2O3/GaN Nanowire Field Effect Transistor Chi-Kang Li,;Jeng-Wei Yu,;Lung-Han Peng,;Yuh-Renn Wu,; Chi-Kang Li,; Jeng-Wei Yu,; Lung-Han Peng,; Yuh-Renn Wu,; LUNG-HAN PENG
臺大學術典藏 2018-09-10T09:25:19Z Study on 50nm Gate Length of Ga2O3/GaN Nanowire Field Effect Transistor Chi-Kang Li,;Jeng-Wei Yu,;Lung-Han Peng,;Yuh-Renn Wu,; Chi-Kang Li,; Jeng-Wei Yu,; Lung-Han Peng,; Yuh-Renn Wu,; LUNG-HAN PENG
臺大學術典藏 2018-09-10T09:25:17Z Gallium Nitride Nanowires Based Nanogenerators and Light-Emitting Diodes Chih-Yen Chen,; Guang Zhu,; Youfan Hu,; Jeng-Wei Yu,; Jinghui Song,; Kai-Yuan Cheng,; Lung-Han Peng,; Li-Jen Chou,; Zhong Lin Wang,; LUNG-HAN PENG
臺大學術典藏 2018-09-10T08:47:03Z Scaling Performance Study of Ga2O3/GaN Nanowire Field Effect Transistor with 3D Finite Element Solver Chi-Kang Li,; Jeng-Wei Yu,; Lung-Han Peng,; Yuh-Renn Wu,; LUNG-HAN PENG
臺大學術典藏 2018-09-10T08:14:35Z 75GHz Ga2O3/{GaN} Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors Jeng-Wei Yu;Yuh-Renn Wu;Jian-Jang Huang;Lung-Han Peng; Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG; LUNG-HAN PENG
臺大學術典藏 2018-09-10T08:14:35Z 75GHz Ga2O3/{GaN} Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors Jeng-Wei Yu;Yuh-Renn Wu;Jian-Jang Huang;Lung-Han Peng; Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG; LUNG-HAN PENG
臺大學術典藏 2018-09-10T08:14:35Z 100GHz depletion-mode Ga$\\less$inf$\\greater$2$\\less$/inf$\\greater$O$\\less$inf$\\greater$3$\\less$/inf$\\greater$/{GaN} single nanowire {MOSFET} by photo-enhanced chemical oxidation method Jeng-Wei Yu;Yuh-Renn Wu;Jian-Jang Huang;Lung-Han Peng; Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG
臺大學術典藏 2018-09-10T08:14:35Z 100GHz depletion-mode Ga$\\less$inf$\\greater$2$\\less$/inf$\\greater$O$\\less$inf$\\greater$3$\\less$/inf$\\greater$/{GaN} single nanowire {MOSFET} by photo-enhanced chemical oxidation method Jeng-Wei Yu;Yuh-Renn Wu;Jian-Jang Huang;Lung-Han Peng; Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG

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