| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation
|
Hwu, J.-G.; JENN-GWO HWU; Tseng, P.-H.; Tseng, P.-H.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2
|
Hsu, C.-M.;Hwu, J.-G.; Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect
|
Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:18Z |
Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides
|
Chen, K.-M.;Hwu, J.-G.; Chen, K.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate
|
Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide
|
JENN-GWO HWU; Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation
|
Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C. |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor
|
Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation
|
Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:16Z |
Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate
|
Chiang, J.-C.;Hwu, J.-G.; Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:16Z |
Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching
|
Wang, C.-Y.;Lu, H.-W.;Hwu, J.-G.; Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:41Z |
Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors
|
Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique
|
Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure
|
JENN-GWO HWU; Hwu, J.-G.; Chen, C.-H.; Chen, C.-H.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k material
|
Cheng, J.-Y.;Lu, H.-T.;Hwu, J.-G.; Cheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides
|
Cheng, J.-Y.;Lu, H.-T.;Yang, C.-Y.;Hwu, J.-G.; Cheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:09Z |
Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
|
Yeh, K.-L.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:09Z |
Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
|
Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:09Z |
Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices
|
Hwu, J.-G.;Chuang, J.-B.;Fu, S.-L.; Hwu, J.-G.; Chuang, J.-B.; Fu, S.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:08Z |
Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensors
|
Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:08Z |
Characterization of inversion tunneling current saturation behavior for MOS(p) capacitors with ultrathin oxides and high-k dielectrics
|
Chen, C.-H.;Chuang, K.-C.;Hwu, J.-G.; Chen, C.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:08Z |
Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxide
|
Chang, C.-H.;Hwu, J.-G.; Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:08Z |
The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides
|
Lee, K.-C.; Chang, H.-Y.; Chang, H.; Hwu, J.-G.; Wung, T.-S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:08Z |
Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA)
|
Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique
|
Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Effect of tensile stress on mos capacitors with ultra-thin gate oxide
|
Chen, H.-L.;Lee, C.-J.;Hwu, J.-G.; Chen, H.-L.; Lee, C.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides
|
Cheng, J.-Y.;Huang, C.-T.;Hwu, J.-G.; Cheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion region
|
Cheng, J.Y.;Huang, C.T.;Lu, H.T.;Hwu, J.G.; Cheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors
|
Tseng, J.-C.;Hwu, J.-G.; Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid
|
Yang, C.-Y.;Hwu, J.-G.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:06Z |
Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering
|
Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU; Chang, C.-H.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T07:29:06Z |
Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method
|
Chuang, K.-C.;Hwu, J.-G.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method
|
Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Application of anodization followed by rapid thermal treatment to thin gate oxide growth
|
Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient
|
Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation
|
Hwu, Jenn-Gwo;Jeng, Ming-Jer; Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Shallow level trap formation in SiO2 induced by high field and thermal stresses
|
Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses
|
Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates
|
Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation
|
Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:56:59Z |
Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system
|
Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:56:59Z |
Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method
|
Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Relationship between mobile charges and interface trap states in silicon mos capacitors
|
Hwu, J.-G.;Wang, W.-S.;Chiou, Y.-L.; Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
|
Hwu, J.G.;Lin, C.M.;Wang, W.S.; Hwu, J.G.; Lin, C.M.; Wang, W.S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique
|
Hwu, J.G.;Wang, W.S.; Hwu, J.G.; Wang, W.S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Rapid thermal post-metallization annealing effect on thin gate oxides
|
Jeng, M.-J.;Lin, H.-S.;Hwu, J-G.; Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method
|
Shen, Y.-P.;Hwu, J.-G.; Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O
|
Jeng, M.-J.;Hwu, J.-G.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
|
Lee, K.-C.;Hwu, J.-G.; Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
|
Hwu, J.-G.;Chang, J.-J.;Wang, W.-S.; Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU |
