| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Rapid thermal post-metallization annealing effect on thin gate oxides
|
Jeng, M.-J.;Lin, H.-S.;Hwu, J-G.; Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method
|
Shen, Y.-P.;Hwu, J.-G.; Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O
|
Jeng, M.-J.;Hwu, J.-G.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
|
Lee, K.-C.;Hwu, J.-G.; Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
|
Hwu, J.-G.;Chang, J.-J.;Wang, W.-S.; Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation
|
Hwu, J.-G.; JENN-GWO HWU; Chuang, K.-C. |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Impact of strain-temperature stress on ultrathin oxide
|
Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification
|
Jeog, M.-J.;Hwu, J.-G.; Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:19Z |
Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics
|
Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes
|
JENN-GWO HWU; Hwu, Jenn-Gwo; Chang-Liao, Kuei-Shu |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method
|
Lin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors
|
Lin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing
|
Hong, C.-C.; Chen, J.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow
|
Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Effect of mechanical stress on characteristics of silicon thermal oxides
|
JENN-GWO HWU; Yen, J.-Y.; Huang, C.-H.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices
|
Shu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation
|
Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing
|
Ting, C.-C.; Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Silicon metal-oxide-semiconductor solar cells with oxide prepared by room temperature anodization in hydrofluosilicic acid solution
|
JENN-GWO HWU; Chen, C.-H.; Hong, C.-C.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique
|
Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide
|
Hong, C.-C.; Chen, W.-R.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:50Z |
Effect of oxide resistance on the characterization of interface trap density in MOS structures
|
Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement in oxide thickness uniformity by repeated spike oxidation
|
Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress
|
Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Application of anodization to reoxidize silicon nitride film
|
Lin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
