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"jenn gwo hwu"的相关文件
显示项目 1-10 / 119 (共12页)
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| 臺大學術典藏 |
2022-05-21T23:36:07Z |
Fringing field induced current coupling in concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide
|
Chen, Jen Hao; Chen, Kung Chu; JENN-GWO HWU |
| 臺大學術典藏 |
2022-04-21T23:17:28Z |
Local-Oxide-Thinning-Induced Deep Depletion Phenomenon in MOS Capacitors
|
Lin, Kuan Wun; JENN-GWO HWU |
| 臺大學術典藏 |
2022-03-22T15:04:54Z |
An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide
|
Lin, Kuan Wun; Chen, Kung Chu; JENN-GWO HWU |
| 臺大學術典藏 |
2022-01-22T00:04:15Z |
Role of Schottky barrier height modulation on the reverse bias current behavior of MIS(P) tunnel diodes
|
Chen, Kung Chu; Lin, Kuan Wun; JENN-GWO HWU |
| 臺大學術典藏 |
2021-11-21T23:19:02Z |
Capacitance Analysis of Transient Behaviour Improved Metal-Insulator-Semiconductor Tunnel Diodes with Ultra Thin Metal Surrounded Gate
|
Huang, Sung Wei; JENN-GWO HWU |
| 臺大學術典藏 |
2021-11-21T23:19:01Z |
Energy-Saving Logic Gates Utilizing Coupling Phenomenon Between MIS(p) Tunneling Diodes
|
Chen, Jen Hao; Chen, Kung Chu; JENN-GWO HWU |
| 臺大學術典藏 |
2021-11-21T23:19:01Z |
Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers
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Huang, Sung Wei; JENN-GWO HWU |
| 臺大學術典藏 |
2021-09-02T00:05:24Z |
Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation
|
Chen Y.-H;Hwu J.-G.; Chen Y.-H; Hwu J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2021-08-21T23:59:01Z |
Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge
|
Lin, Jian Yu; JENN-GWO HWU |
| 臺大學術典藏 |
2021-05-05T02:52:25Z |
Enhanced two states current in MOS-Gated MIS separate write/read storage device by oxide soft breakdown in remote gate
|
Chen, W.-C.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
显示项目 1-10 / 119 (共12页)
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