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显示项目 11-20 / 119 (共12页)
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机构 日期 题名 作者
臺大學術典藏 2020-06-11T06:42:11Z Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer Chen, Tzu-Yu;Hwu, Jenn-Gwo; Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:10Z Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings Wu, Y.-L.;Kuo, K.-M.;Hwu, J.-G.; Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:10Z Improvement of oxide leakage currents in mos structures by postirradiation annealing Lin, J.-J.;Hwu, J.-G.; Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:10Z The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films Liao, C.-S.;Hwu, J.-G.; Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:10Z Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring Li, H.-J.;Yang, C.-F.;Hwu, J.-G.; Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:09Z Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T15:32:58Z Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading with an MIS Tunnel Diode Sensor Chien-Shun Liao and Wei-Chih Kao and Jenn-Gwo Hwu; JENN-GWO HWU
臺大學術典藏 2018-09-10T14:54:17Z Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T14:54:17Z Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T14:54:17Z Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU

显示项目 11-20 / 119 (共12页)
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