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机构 日期 题名 作者
臺大學術典藏 2018-09-10T08:36:17Z Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide JENN-GWO HWU; Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G.
臺大學術典藏 2018-09-10T08:36:17Z Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.
臺大學術典藏 2018-09-10T08:36:17Z Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T08:36:17Z Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T08:36:16Z Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate Chiang, J.-C.;Hwu, J.-G.; Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T08:36:16Z Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching Wang, C.-Y.;Lu, H.-W.;Hwu, J.-G.; Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T08:09:41Z Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T08:09:40Z Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T08:09:40Z Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure JENN-GWO HWU; Hwu, J.-G.; Chen, C.-H.; Chen, C.-H.;Hwu, J.-G.
臺大學術典藏 2018-09-10T08:09:40Z Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k material Cheng, J.-Y.;Lu, H.-T.;Hwu, J.-G.; Cheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU

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