| 臺大學術典藏 |
2018-09-10T06:57:01Z |
C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation
|
Hwu, Jenn-Gwo;Jeng, Ming-Jer; Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Shallow level trap formation in SiO2 induced by high field and thermal stresses
|
Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses
|
Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates
|
Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation
|
Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:56:59Z |
Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system
|
Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:56:59Z |
Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method
|
Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Relationship between mobile charges and interface trap states in silicon mos capacitors
|
Hwu, J.-G.;Wang, W.-S.;Chiou, Y.-L.; Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
|
Hwu, J.G.;Lin, C.M.;Wang, W.S.; Hwu, J.G.; Lin, C.M.; Wang, W.S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique
|
Hwu, J.G.;Wang, W.S.; Hwu, J.G.; Wang, W.S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Rapid thermal post-metallization annealing effect on thin gate oxides
|
Jeng, M.-J.;Lin, H.-S.;Hwu, J-G.; Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method
|
Shen, Y.-P.;Hwu, J.-G.; Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O
|
Jeng, M.-J.;Hwu, J.-G.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
|
Lee, K.-C.;Hwu, J.-G.; Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
|
Hwu, J.-G.;Chang, J.-J.;Wang, W.-S.; Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation
|
Hwu, J.-G.; JENN-GWO HWU; Chuang, K.-C. |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Impact of strain-temperature stress on ultrathin oxide
|
Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification
|
Jeog, M.-J.;Hwu, J.-G.; Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:19Z |
Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics
|
Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes
|
JENN-GWO HWU; Hwu, Jenn-Gwo; Chang-Liao, Kuei-Shu |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method
|
Lin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors
|
Lin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing
|
Hong, C.-C.; Chen, J.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow
|
Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Effect of mechanical stress on characteristics of silicon thermal oxides
|
JENN-GWO HWU; Yen, J.-Y.; Huang, C.-H.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices
|
Shu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation
|
Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing
|
Ting, C.-C.; Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Silicon metal-oxide-semiconductor solar cells with oxide prepared by room temperature anodization in hydrofluosilicic acid solution
|
JENN-GWO HWU; Chen, C.-H.; Hong, C.-C.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique
|
Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide
|
Hong, C.-C.; Chen, W.-R.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:50Z |
Effect of oxide resistance on the characterization of interface trap density in MOS structures
|
Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement in oxide thickness uniformity by repeated spike oxidation
|
Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress
|
Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Application of anodization to reoxidize silicon nitride film
|
Lin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments
|
Chang-Liao, K.-S.;Hwu, J.-G.; Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:48Z |
Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal
|
Chen, Y.-C.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:48Z |
Stress effect on the kinetics of silicon thermal oxidation
|
Yen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2011 |
Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides
|
Chang, S.-J.;Hwu, J.-G.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 國立高雄師範大學 |
2005 |
The Effect of Photon Illumination in Rapid Thermal Processing on the Characteristics of MOS Structures with Ultra-thin Oxides Examined by Substrate Injection
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
2002 |
Effect of Mechanical Stress on the Characteristics of Silicon Thermal Oxides
|
Chia-Hong Huang;Jui-Yuan Yen;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
2001 |
Breakdown Characteristics of Ultra-thin Gate Oxide ( < 4nm ) in MOS Structure Subjected Substrate Injection
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
2001 |
Anomalous Low-Voltage Tunneling Current ( LVTC ) Characteristics of Ultra-Thin Gate Oxide ( ~2nm ) after High Field Stress
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 臺大學術典藏 |
2001 |
Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress
|
JENN-GWO HWU; Hwu, J.-G.; Huang, C.-H. |
| 臺大學術典藏 |
2001 |
An on-chip temperature sensor by utilizing a MOS tunneling diode
|
Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 國立高雄師範大學 |
2000 |
Enhancement in Soft Breakdown Occurrence on Ultra-thin Gate Oxides Caused by Photon Effect in Rapid Thermal Post Oxidation Annealing
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
2000 |
Role of Interface Trap Generation in the Low-Voltage Tunneling Current ( LVTC ) Characteristics of Ultra-Thin Gate Oxide ( ~2nm ) under High Field Stress
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
1999 |
The Breakdown Properties of Front- and Back-side Post Oxidation Annealed( POA ) Ultrathin Gate Oxide ( <3nm ) under High Field Stress
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 臺大學術典藏 |
1996 |
Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process
|
JENN-GWO HWU; Hwu, J.-G.; Lu, W.-S.; Lu, W.-S.;Hwu, J.-G. |
