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机构 日期 题名 作者
臺大學術典藏 2018-09-10T05:52:20Z Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation Hwu, J.-G.; JENN-GWO HWU; Chuang, K.-C.
臺大學術典藏 2018-09-10T05:52:20Z Impact of strain-temperature stress on ultrathin oxide Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T05:52:20Z Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification Jeog, M.-J.;Hwu, J.-G.; Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T05:52:19Z Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:55Z Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes JENN-GWO HWU; Hwu, Jenn-Gwo; Chang-Liao, Kuei-Shu
臺大學術典藏 2018-09-10T04:08:55Z Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method Lin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:55Z Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors Lin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:54Z Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing Hong, C.-C.; Chen, J.-L.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:54Z Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:54Z Effect of mechanical stress on characteristics of silicon thermal oxides JENN-GWO HWU; Yen, J.-Y.; Huang, C.-H.; Hwu, J.-G.

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