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机构 日期 题名 作者
臺大學術典藏 2018-09-10T04:08:55Z Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method Lin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:55Z Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors Lin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:54Z Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing Hong, C.-C.; Chen, J.-L.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:54Z Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:54Z Effect of mechanical stress on characteristics of silicon thermal oxides JENN-GWO HWU; Yen, J.-Y.; Huang, C.-H.; Hwu, J.-G.
臺大學術典藏 2018-09-10T04:08:54Z Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices Shu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:54Z Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:53Z Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing Ting, C.-C.; Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T04:08:53Z Silicon metal-oxide-semiconductor solar cells with oxide prepared by room temperature anodization in hydrofluosilicic acid solution JENN-GWO HWU; Chen, C.-H.; Hong, C.-C.; Hwu, J.-G.
臺大學術典藏 2018-09-10T04:08:53Z Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU

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