| 臺大學術典藏 |
2022-05-21T23:36:07Z |
Fringing field induced current coupling in concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide
|
Chen, Jen Hao; Chen, Kung Chu; JENN-GWO HWU |
| 臺大學術典藏 |
2022-04-21T23:17:28Z |
Local-Oxide-Thinning-Induced Deep Depletion Phenomenon in MOS Capacitors
|
Lin, Kuan Wun; JENN-GWO HWU |
| 臺大學術典藏 |
2022-03-22T15:04:54Z |
An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide
|
Lin, Kuan Wun; Chen, Kung Chu; JENN-GWO HWU |
| 臺大學術典藏 |
2022-01-22T00:04:15Z |
Role of Schottky barrier height modulation on the reverse bias current behavior of MIS(P) tunnel diodes
|
Chen, Kung Chu; Lin, Kuan Wun; JENN-GWO HWU |
| 臺大學術典藏 |
2021-11-21T23:19:02Z |
Capacitance Analysis of Transient Behaviour Improved Metal-Insulator-Semiconductor Tunnel Diodes with Ultra Thin Metal Surrounded Gate
|
Huang, Sung Wei; JENN-GWO HWU |
| 臺大學術典藏 |
2021-11-21T23:19:01Z |
Energy-Saving Logic Gates Utilizing Coupling Phenomenon Between MIS(p) Tunneling Diodes
|
Chen, Jen Hao; Chen, Kung Chu; JENN-GWO HWU |
| 臺大學術典藏 |
2021-11-21T23:19:01Z |
Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers
|
Huang, Sung Wei; JENN-GWO HWU |
| 臺大學術典藏 |
2021-09-02T00:05:24Z |
Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation
|
Chen Y.-H;Hwu J.-G.; Chen Y.-H; Hwu J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2021-08-21T23:59:01Z |
Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge
|
Lin, Jian Yu; JENN-GWO HWU |
| 臺大學術典藏 |
2021-05-05T02:52:25Z |
Enhanced two states current in MOS-Gated MIS separate write/read storage device by oxide soft breakdown in remote gate
|
Chen, W.-C.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:11Z |
Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer
|
Chen, Tzu-Yu;Hwu, Jenn-Gwo; Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings
|
Wu, Y.-L.;Kuo, K.-M.;Hwu, J.-G.; Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement of oxide leakage currents in mos structures by postirradiation annealing
|
Lin, J.-J.;Hwu, J.-G.; Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films
|
Liao, C.-S.;Hwu, J.-G.; Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring
|
Li, H.-J.;Yang, C.-F.;Hwu, J.-G.; Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:09Z |
Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation
|
Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T15:32:58Z |
Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading with an MIS Tunnel Diode Sensor
|
Chien-Shun Liao and Wei-Chih Kao and Jenn-Gwo Hwu; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor
|
Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates
|
Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide
|
Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application
|
Tian, W.-C.; Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; JENN-GWO HWU; Hwu, J.-G.; Pan, S.C. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides
|
Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors
|
Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode
|
JENN-GWO HWU; Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics
|
Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
