|
English
|
正體中文
|
简体中文
|
總筆數 :0
|
|
造訪人次 :
51800296
線上人數 :
996
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
"jenn gwo hwu"的相關文件
顯示項目 6-15 / 119 (共12頁)
1 2 3 4 5 6 7 8 9 10 > >>
每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2021-11-21T23:19:01Z |
Energy-Saving Logic Gates Utilizing Coupling Phenomenon Between MIS(p) Tunneling Diodes
|
Chen, Jen Hao; Chen, Kung Chu; JENN-GWO HWU |
| 臺大學術典藏 |
2021-11-21T23:19:01Z |
Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers
|
Huang, Sung Wei; JENN-GWO HWU |
| 臺大學術典藏 |
2021-09-02T00:05:24Z |
Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation
|
Chen Y.-H;Hwu J.-G.; Chen Y.-H; Hwu J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2021-08-21T23:59:01Z |
Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge
|
Lin, Jian Yu; JENN-GWO HWU |
| 臺大學術典藏 |
2021-05-05T02:52:25Z |
Enhanced two states current in MOS-Gated MIS separate write/read storage device by oxide soft breakdown in remote gate
|
Chen, W.-C.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:11Z |
Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer
|
Chen, Tzu-Yu;Hwu, Jenn-Gwo; Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings
|
Wu, Y.-L.;Kuo, K.-M.;Hwu, J.-G.; Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement of oxide leakage currents in mos structures by postirradiation annealing
|
Lin, J.-J.;Hwu, J.-G.; Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films
|
Liao, C.-S.;Hwu, J.-G.; Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring
|
Li, H.-J.;Yang, C.-F.;Hwu, J.-G.; Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
顯示項目 6-15 / 119 (共12頁)
1 2 3 4 5 6 7 8 9 10 > >>
每頁顯示[10|25|50]項目
|
