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"jenn gwo hwu"的相關文件
顯示項目 56-65 / 119 (共12頁)
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| 臺大學術典藏 |
2018-09-10T07:29:08Z |
Characterization of inversion tunneling current saturation behavior for MOS(p) capacitors with ultrathin oxides and high-k dielectrics
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Chen, C.-H.;Chuang, K.-C.;Hwu, J.-G.; Chen, C.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:08Z |
Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxide
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Chang, C.-H.;Hwu, J.-G.; Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:08Z |
The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides
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Lee, K.-C.; Chang, H.-Y.; Chang, H.; Hwu, J.-G.; Wung, T.-S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:08Z |
Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA)
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Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique
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Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Effect of tensile stress on mos capacitors with ultra-thin gate oxide
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Chen, H.-L.;Lee, C.-J.;Hwu, J.-G.; Chen, H.-L.; Lee, C.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides
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Cheng, J.-Y.;Huang, C.-T.;Hwu, J.-G.; Cheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion region
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Cheng, J.Y.;Huang, C.T.;Lu, H.T.;Hwu, J.G.; Cheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors
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Tseng, J.-C.;Hwu, J.-G.; Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid
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Yang, C.-Y.;Hwu, J.-G.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
顯示項目 56-65 / 119 (共12頁)
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