| 臺大學術典藏 |
2020-06-11T06:42:11Z |
Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer
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Chen, Tzu-Yu;Hwu, Jenn-Gwo; Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings
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Wu, Y.-L.;Kuo, K.-M.;Hwu, J.-G.; Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement of oxide leakage currents in mos structures by postirradiation annealing
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Lin, J.-J.;Hwu, J.-G.; Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films
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Liao, C.-S.;Hwu, J.-G.; Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring
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Li, H.-J.;Yang, C.-F.;Hwu, J.-G.; Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:09Z |
Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation
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Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T15:32:58Z |
Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading with an MIS Tunnel Diode Sensor
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Chien-Shun Liao and Wei-Chih Kao and Jenn-Gwo Hwu; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor
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Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates
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Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide
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Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application
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Tian, W.-C.; Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; JENN-GWO HWU; Hwu, J.-G.; Pan, S.C. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides
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Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors
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Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode
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JENN-GWO HWU; Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics
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Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Non-planar substrate metal-oxide-semiconductor photo-capacitance detectors with enhanced deep depletion sensitivity at convex corner
|
Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode
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Lin, Y.-K.;Lin, L.;Hwu, J.-G.; Lin, Y.-K.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes
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Lin, C.-C.;Hsu, P.-L.;Lin, L.;Hwu, J.-G.; Lin, C.-C.; Hsu, P.-L.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer
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Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:20Z |
Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization
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Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G.; Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:20Z |
Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization
|
Hwu, J.-G.; JENN-GWO HWU; Chen, T.-Y.;Pang, C.-S.;Hwu, J.-G.; Chen, T.-Y.; Pang, C.-S. |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer
|
Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers
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JENN-GWO HWU; Hwu, J.-G.; Lee, C.-W.; Lee, C.-W.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics
|
Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response
|
Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
