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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
臺大學術典藏 2018-09-10T03:44:49Z Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments Chang-Liao, K.-S.;Hwu, J.-G.; Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:48Z Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal Chen, Y.-C.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:48Z Stress effect on the kinetics of silicon thermal oxidation Yen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2011 Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides Chang, S.-J.;Hwu, J.-G.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU
國立高雄師範大學 2005 The Effect of Photon Illumination in Rapid Thermal Processing on the Characteristics of MOS Structures with Ultra-thin Oxides Examined by Substrate Injection Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏
國立高雄師範大學 2002 Effect of Mechanical Stress on the Characteristics of Silicon Thermal Oxides Chia-Hong Huang;Jui-Yuan Yen;Jenn-Gwo Hwu; 黃嘉宏
國立高雄師範大學 2001 Breakdown Characteristics of Ultra-thin Gate Oxide ( < 4nm ) in MOS Structure Subjected Substrate Injection Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏
國立高雄師範大學 2001 Anomalous Low-Voltage Tunneling Current ( LVTC ) Characteristics of Ultra-Thin Gate Oxide ( ~2nm ) after High Field Stress Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏
臺大學術典藏 2001 Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress JENN-GWO HWU; Hwu, J.-G.; Huang, C.-H.
臺大學術典藏 2001 An on-chip temperature sensor by utilizing a MOS tunneling diode Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU

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