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Showing items 31-40 of 119  (12 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T09:44:20Z Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization Hwu, J.-G.; JENN-GWO HWU; Chen, T.-Y.;Pang, C.-S.;Hwu, J.-G.; Chen, T.-Y.; Pang, C.-S.
臺大學術典藏 2018-09-10T09:44:19Z Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T09:44:19Z Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers JENN-GWO HWU; Hwu, J.-G.; Lee, C.-W.; Lee, C.-W.;Hwu, J.-G.
臺大學術典藏 2018-09-10T09:44:19Z Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T09:44:19Z Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T09:44:19Z Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation Hwu, J.-G.; JENN-GWO HWU; Tseng, P.-H.; Tseng, P.-H.;Hwu, J.-G.
臺大學術典藏 2018-09-10T09:44:19Z Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2 Hsu, C.-M.;Hwu, J.-G.; Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T09:44:19Z Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T08:36:18Z Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides Chen, K.-M.;Hwu, J.-G.; Chen, K.-M.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T08:36:17Z Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU

Showing items 31-40 of 119  (12 Page(s) Totally)
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