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Taiwan Academic Institutional Repository >
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"jenn gwo hwu"
Showing items 71-80 of 119 (12 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T06:57:01Z |
C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation
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Hwu, Jenn-Gwo;Jeng, Ming-Jer; Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Shallow level trap formation in SiO2 induced by high field and thermal stresses
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Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses
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Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates
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Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation
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Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:56:59Z |
Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system
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Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:56:59Z |
Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method
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Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Relationship between mobile charges and interface trap states in silicon mos capacitors
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Hwu, J.-G.;Wang, W.-S.;Chiou, Y.-L.; Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
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Hwu, J.G.;Lin, C.M.;Wang, W.S.; Hwu, J.G.; Lin, C.M.; Wang, W.S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique
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Hwu, J.G.;Wang, W.S.; Hwu, J.G.; Wang, W.S.; JENN-GWO HWU |
Showing items 71-80 of 119 (12 Page(s) Totally)
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