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Taiwan Academic Institutional Repository >
Browse by Author
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"jheng jheng j s"
Showing items 1-6 of 6 (1 Page(s) Totally) 1 View [10|25|50] records per page
| 國立成功大學 |
2020 |
Voltage-tunable uvc–uvb dual-band metal–semiconductor–metal photodetector based on ga2o3/mgzno heterostructure by rf sputtering
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Jheng, Jheng J.-S.;Wang, C.-K.;Chiou, Y.-Z.;Chang, S.-P.;Chang, S.-J. |
| 國立成功大學 |
2020 |
MgZnO/SiO2/ZnO metal-semiconductor-metal dual-band UVA and UVB photodetector with different MgZnO thicknesses by RF magnetron sputter
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Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J. |
| 國立成功大學 |
2020 |
MgZnO MSM UV Photodetector with Different Annealing Temperatures by RF Magnetron Sputtering
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Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J. |
| 國立成功大學 |
2017 |
Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes
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Wang, C.K.;Hung, K.C.;Chiou, Y.Z.;Jheng, Jheng J.S.;Chang, S.P.;Chang, S.J. |
| 國立成功大學 |
2017 |
GaN-based blue light-emitting diodes with an electron transmission layer
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Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J. |
| 國立成功大學 |
2017 |
Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses
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Wang, C.K.;Wang, Y.W.;Chiou, Y.Z.;Chang, S.H.;Jheng, Jheng J.S.;Chang, S.P.;Chang, S.J. |
Showing items 1-6 of 6 (1 Page(s) Totally) 1 View [10|25|50] records per page
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