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| 國立交通大學 |
2017-04-21T06:49:56Z |
N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
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Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Tsai, Tsung-Ming; Jian, Fu-Yen; Chang, Kuan-Chang; Tai, Ya-Hsiang |
| 國立交通大學 |
2015-12-02T02:59:28Z |
Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors
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Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Kuan-Chang; Yang, Chung-Yi; Chou, Wu-Ching; Chou, Cheng-Hsu; Chung, Wang-Cheng |
| 國立成功大學 |
2015-10 |
Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors
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Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Kuan-Chang; Yang, Chung-Yi; Chou, Wu-Ching; Chou, Cheng-Hsu; Chung, Wang-Cheng |
| 國立交通大學 |
2014-12-08T15:36:19Z |
Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors
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Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Chang, Kuan-Chang; Syu, Yong-En; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi |
| 國立交通大學 |
2014-12-08T15:33:45Z |
N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium-gallium-zinc-oxide thin film transistors
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Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Syu, Yong-En; Chang, Kuan-Chang; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:33:32Z |
Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment
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Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Tai, Ya-Hsiang; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi |
| 國立交通大學 |
2014-12-08T15:22:46Z |
Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
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Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Syu, Yong-En; Chang, Kuan-Chang; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi |
| 國立交通大學 |
2014-12-08T15:22:41Z |
Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
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Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Syu, Yong-En; Chang, Kuan-Chang; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi |
| 國立成功大學 |
2014-06 |
Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors
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Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Chang, Kuan-Chang; Syu, Yong-En; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi |
| 國立成功大學 |
2012-05-28 |
The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors
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Huang, Sheng-Yao; Chang, Ting-Chang; Lin, Li-Wei; Yang, Man-Chun; Chen, Min-Chen; Jhu, Jhe-Ciou; Jian, Fu-Yen |
Showing items 1-10 of 10 (1 Page(s) Totally)
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