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"jian jang huang"
Showing items 126-135 of 135 (6 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T05:58:02Z |
Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure
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Horng-Shyang Chen; Chih-Feng Lu; Dong-Ming Yeh; Chi-Feng Huang; Jian-Jang Huang; Chih-Chung Yang; JIAN-JANG HUANG; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T05:58:02Z |
Junction Temperature-Controlled Spectrum in a Two-Color InGaN–GaN Quantum-Well Light-Emitting Diode
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Chih-Feng Lu; Dong-Ming Yeh; Horng-Shyang Chen; Chi-Feng Huang; Jian-Jang Huang; C. C. Yang; JIAN-JANG HUANG; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T05:53:20Z |
Contributions of sidewall illumination and current spreading to the light emission of inGaN - GaN light-emitting diode arrays
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Yu, Y.-C.; Hsieh, C.-H.; Shih, G.-A.; Chiu, T.-Y.; Yeh, D.-M.; Lu, C.-F.; Huang, J.J.; Yang, C.C.; JIAN-JANG HUANG; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T05:23:11Z |
Operation lifetimes of organic light-emitting devices with different layer structures
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JIAN-JANG HUANG; Lee, Jiun-Haw; Chang, Yih; Hu, Pier-Jy; Liao, Chi-Chih; Lee, Jiun-Haw; Huang, JianJang |
| 臺大學術典藏 |
2018-09-10T04:12:43Z |
1.55-{\\&}{\\#}x003BC$\\mathsemicolon$m asymmetric Fabry-Perot modulator ({AFPM}) for high-speed applications
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Jian Jang Huang; Theodore Chung; M. Lerttamrab; Shun Lien Chuang; M. Feng; JIAN-JANG HUANG |
| 臺大學術典藏 |
2018-09-10T04:12:41Z |
1.55-m asymmetric Fabry-Perot modulator (AFPM) for high-speed applications
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JIAN-JANG HUANG; M. Feng; Shun Lien Chuang; M. Lerttamrab; Theodore Chung; Jian Jang Huang |
| 國立臺灣海洋大學 |
2013 |
Surface plasmon-enhanced photoluminescence of DCJTB by using silver nanoparticle arrays
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Hsiang-Lin Huang;Chen Feng Chou;Shi Hua Shiao;Yi-Cheng Liu;Jian-Jang Huang;Shien Uang Jen;Hai-Pang Chiang |
| 臺大學術典藏 |
2013 |
ZnO light-emitting nanoprobes for tumor detection
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Chen, Y.-T.;Shen, Y.-C.;Yang, S.-C.;Yang, T.-L.;Huang, J.-J.; Chen, Y.-T.; Shen, Y.-C.; Yang, S.-C.; Yang, T.-L.; Huang, J.-J.; JIAN-JANG HUANG; TSUNG-LIN YANG |
| 臺大學術典藏 |
2006 |
Orange{\\&}ndash$\\mathsemicolon$Red Light-Emitting Diodes Based on a Prestrained {InGaN}{\\&}ndash$\\mathsemicolon${GaN} Quantum-Well Epitaxy Structure
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Horng-Shyang Chen; Chih-Feng Lu; Dong-Ming Yeh; Chi-Feng Huang; Jian-Jang Huang; Chih-Chung Yang; JIAN-JANG HUANG; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2001-03 |
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
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B.S. Shelton; JIAN-JANG HUANGet al.; D.J.H. Lambert; Jian Jang Huang; M.M. Wong; U. Chowdhury; Ting Gang Zhu; H.K. Kwon; Z. Liliental-Weber; M. Benarama; M. Feng; R.D. Dupuis |
Showing items 126-135 of 135 (6 Page(s) Totally)
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