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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2020-02-02T23:54:29Z |
Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device
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Su, Po-Cheng; Jiang, Cheng-Min; Chen, Yu-Jia; Wang, Chih-Chieh; Li, Kai-Shin; Lin, Chao-Cheng; Wang, Tahui |
| 國立交通大學 |
2019-04-02T05:59:54Z |
Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory
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Su, Po-Cheng; Jiang, Cheng-Min; Wang, Chih-Wei; Wang, Tahui |
| 國立交通大學 |
2018-08-21T05:54:20Z |
Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method
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Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:56:17Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
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Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:56:07Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
|
Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
Showing items 1-5 of 5 (1 Page(s) Totally)
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