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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立成功大學 |
2009-06-23 |
氮化鎢薄膜閘極電極之物性與電性研究
|
江佩錞; Jiang, Pei-Chuen |
| 國立成功大學 |
2008-09-08 |
Influence of thickness on the material characteristics of reactively sputtered W2N layer and electrical properties of W/W2N/SiO2/Si capacitors
|
Jiang, Pei-Chuen; Yen, Chih-Kun; Chen, Jen-Sue |
| 國立成功大學 |
2006-09-18 |
Dependence of crystal structure and work function of WNx films on the nitrogen content
|
Jiang, Pei-Chuen; Lai, Yi-Sheng; Chen, Jen-Sue |
| 國立成功大學 |
2006 |
Influence of nitrogen content in WNx on its thermal stability and electrical property as a gate electrode
|
Jiang, Pei-Chuen; Lai, Yi-Sheng; Chen, Jen-Sue |
| 國立成功大學 |
2004 |
Effects of post-metal annealing on electrical characteristics and thermal stability of W2N/Ta2O5/Si MOS capacitors
|
Jiang, Pei-Chuen; Chen, Jen-Sue |
| 國立成功大學 |
2003-05 |
Structural and electrical characteristics of W-N thin films prepared by reactive rf sputtering
|
Jiang, Pei-Chuen; Chen, Jen-Sue; Lin, Y. K. |
| 國立成功大學 |
2002-06-18 |
氮化鎢薄膜之製備及閘極特性之研究
|
江佩錞; Jiang, Pei-Chuen |
| 國立成功大學 |
2002-06-18 |
氮化鎢薄膜之製備及閘極特性之研究
|
江佩錞; Jiang, Pei-Chuen |
Showing items 1-8 of 8 (1 Page(s) Totally)
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