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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:44:48Z |
Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids
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Yang, Chung-Chleh; Dai, Jing-He; Jiang, Ren Hao; Zheng, Jing-Hul; Lin, Chia-Feng; Kuo, Hao-Chung; Wang, Shing-Chung |
| 國立交通大學 |
2014-12-08T15:29:25Z |
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
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Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang |
| 國立交通大學 |
2014-12-08T15:26:40Z |
Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
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Fu, Yi-Keng; Chen, Bo-Chun; Fang, Yen-Hsiang; Jiang, Ren-Hao; Lu, Yu-Hsuan; Xuan, Rong; Huang, Kai-Feng; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jebb-Fang; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Wet mesa etching process in InGaN-based light emitting diodes
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Yang, Chung-Chieh; Lin, Chia-Feng; Jiang, Ren-Hao; Liu, Hsun-Chih; Lin, Chun-Min; Chang, Chung-Ying; Wuu, Dong-Sing; Kuo, Hao-Chung; Wang, Shing-Chung |
| 國立交通大學 |
2014-12-08T15:11:54Z |
The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
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Fu, Yi-Keng; Jiang, Ren-Hao; Lu, Yu-Hsuan; Chen, Bo-Chun; Xuan, Rong; Fang, Yen-Hsiang; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jenn-Fang |
| 國立成功大學 |
2011-10 |
Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
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Fu, Yi-Keng; Chen, Bo-Chun; Fang, Yen-Hsiang; Jiang, Ren-Hao; Lu, Yu-Hsuan; Xuan, Rong; Huang, Kai-Feng; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jebb-Fang; Chang, Chun-Yen |
| 國立成功大學 |
2011-08 |
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
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Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang |
| 國立成功大學 |
2011-03-21 |
The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
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Fu, Yi-Keng; Jiang, Ren-Hao; Lu, Yu-Hsuan; Chen, Bo-Chun; Xuan, Rong; Fang, Yen-Hsiang; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jenn-Fang |
Showing items 1-8 of 8 (1 Page(s) Totally)
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