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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 臺大學術典藏 |
2022-09-21T23:30:31Z |
Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors
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Jiang, Yu Sen; Huang, Kuei Wen; Yi, Sheng Han; Wang, Chin I.; Chang, Teng Jan; Kao, Wei Chung; Wang, Chun Yuan; Yin, Yu Tung; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-04-21T23:17:24Z |
Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing
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Chang, Teng Jan; Jiang, Yu Sen; Yi, Sheng Han; Chou, Chun Yi; Wang, Chin I.; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T15:04:52Z |
Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing
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Chou, Chun Yi; Chen, Hsing Yang; Jiang, Yu Sen; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-10-21T23:27:31Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
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Wang, Chin I.; Chen, Hsin Yang; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Chang, Chih Sheng; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-09-21T23:19:32Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang, Chin I.; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Shyue, Jing Jong; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-21T23:58:56Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
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Chang, Teng Jan; Wang, Ting Yun; Wang, Chin I.; Huang, Zheng Da; Jiang, Yu Sen; Chou, Chun Yi; Kao, Wei Chung; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-01-19T12:08:27Z |
Sub-7-nm textured ZrO2 with giant ferroelectricity
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Huang, Kuei Wen; Yi, Sheng Han; Jiang, Yu Sen; Kao, Wei Chung; Yin, Yu Tung; Beck, David; Korolkov, Vladimir; Proksch, Roger; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN |
Showing items 1-7 of 7 (1 Page(s) Totally)
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