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"jieng jheng hong"的相關文件
顯示項目 1-5 / 5 (共1頁)
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| 國立交通大學 |
2015-07-21T08:31:27Z |
STABLE RESISTIVE SWITCHING CHARACTERISTICS OF Al2O3 LAYERS INSERTED IN HfPO2 BASED RRAM DEVICES
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Huang, Chun-Yang; Jieng, Jheng-Hong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:39Z |
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
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Chand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
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Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
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Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:42Z |
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
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Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
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