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Showing items 101-114 of 114  (3 Page(s) Totally)
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Institution Date Title Author
國立東華大學 2003-06 Structural and optical properties of Ga(As,N)/GaAs epilayers grown with continuous and pulsed deposition and nitridization 祁錦雲; Jim-Yong Chi; Soshnikov; A. R. Kovsh; V. M. Ustinov; N. V. Kryzhanovskaya; N. N. Ledentsov; D. Bimberg; H. Kirmse; W. Neumann; O. M. Gorbenko; J. S. Wang; R. S. Hsiao; J. Chi
國立東華大學 2003-06 The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular beam epitaxy 祁錦雲; Jim-Yong Chi; N. V. Kryzhanovskaya; A. G. Gladyshev; D. S. Sizov; A. R. Kovsh; A. F. Tsatsul' nikov; J. Y. Chi; J. S. Wang; L. wei ; V. M. Ustinov
國立東華大學 2003-04 High-performance 1.3 micron single-mode ridge waveguide InAs quantum dot and InGaAsN/GaAs quantum well lasers 祁錦雲; Jim-Yong Chi; V.M.Ustinov; A.R.Kovsh; D.A.Livshits; A.E.Zhukov; J.S.Wang; G.Lin; J.Y.Chi
國立東華大學 2003 The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by MBE 祁錦雲; Jim-Yong Chi; AR Kovsh; AF Tsatsul'nikov; JY Chi;JS Wang
國立東華大學 2002-12 High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells 祁錦雲; Jim-Yong Chi; R. Kovsh; A. E. Zhukov; N. A. Maleev; S. S. Mikhrin; D. A. Livshits; Y. M. Shernyakov; M. V. Maximov; N. A. Pihtin; I. S. Tarasov;V. M. Ustinov; Zh. I. Alferov; J. S. Wang; L. Wei, G. Lin; J. Y. Chi; N. N. Ledentsov1; D. Bimberg
國立東華大學 2002-12 1.3 m lasers based on InAs/GaAs quantum dots with high optical gain 祁錦雲; Jim-Yong Chi; R. Kovsh; N. A. Maleev; A. E. Zhukov; S. S. Mikhrin; D. A. Livshits; Y. M. Shernyakov; A . 11 V. Sakharov; M. V. Maximov; V. M. Ustinov; Zh. I. Alferov; J. S. Wang; R. S. Shiao; L. Wei; Y. T. Wu; G. Lin; J. Y. Chi; N. N. Ledentsov; D. Bimberg
國立東華大學 2002-09 Narrow ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots 祁錦雲; Jim-Yong Chi; J.S. Wang; R.S. Shiao; G.R. Lin; L.C. Wei; Y.T. Wu;J.Y. Chi; A.R.Kovsh; N.A. Maleev; A.V. Sakharov;D.A. Livshits
國立東華大學 2002-06 Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence spectra of InGaAsN alloys 祁錦雲; Jim-Yong Chi; M. Mintairov; P. A. Blagnov; J. L. Merz; V. M. Ustinov; A. S. Vlasov; A. R. Kovsh; J. S. Wang; L. Wei ; J. Y. Chi
國立東華大學 2002-06 High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells 祁錦雲; Jim-Yong Chi; R. Kovsh; A. E. Zhukoz; N. A. Maleev; S. S. Mikhrin; A. V. Vasil'ev; Yu. M. Shernyakov; D. A. Livshits; M. V. Maximov; D. S. Sizov; N. V. Kryzhanovskaya; N. A. Pikhtin; V. A. Kapitonov; I. S. Tarasov; N. N. Ledentsov; V. M. Ustinov; J. S. Wang; L. Wei; G. Lin ; J. Y. Chi
國立東華大學 2002 Characteristics of resonant cavity light emitting diodes with intracavity contacts in the 980 nm range 祁錦雲; Jim-Yong Chi; Hung-Pin D. Yang; J. S. Wang;C. P. Sung; C. Y. Huang; H. C. Yu; K. F. Lin; Y. T. Wu; A. R. kovsh; N. A. Maleev; D. Livchits; J. Y. Chi
國立東華大學 2002 Investigation and fabrication of 1.3 um InAs quantum dot resonant cavity light emitting diodes 祁錦雲; Jim-Yong Chi; H. C. Tu; S. J. Chang; Y. K. Su; J. S. Wang; A. R. Kovsh; Y. T. Wu; K. F. Lin; R. S. Shiao; L. P. Chen; C. Y. Huang; W. J. Jiang; C. P. Sung; J. Y. Chi
國立東華大學 2002 The spectral and temperature behavior of single mode InAs/InGaAs/GaAs quantum dot lasers lasing at 1.3 um range 祁錦雲; Jim-Yong Chi; G. Lin; J. S. Wang; R. S. Hshiao; L. Wei; Y. T. Wu; J. Y. Chi; A. R. Kovsh; D. A. Livshits
國立東華大學 2001-10 MBE Growth of GaAsN Layers with High Luminescence Efficiency 祁錦雲; Jim-Yong Chi; A.R.Kovsh; J.S.Wang; L.Wei; J.Y. Chi; V.A.Odnoblyudov; B.V.Volovik; A.F.Tsatsul'nikov; V.M.Ustinov
國立東華大學 2001-06 MBE growth of high quality GaAsN bulk layers 祁錦雲; Jim-Yong Chi; A.R.Kovsh; J.Y.Chi; J.S.Wang; L.Wei; B.V.Volovik

Showing items 101-114 of 114  (3 Page(s) Totally)
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