| 國立東華大學 |
2005 |
1.3 μm Quantum Dot Vertical Cavity Surface Emitting Laser with External Light Injection
|
祁錦雲; Jim-Yong Chi; P. C. Peng; Y. H. Chang; H. C. Kuo; W. K. Tsai; Gray Lin;C. T. Lin; H. C. Yu; H. P. Yang; R. S. Hsiao; K. F. Lin;S. Chi; S. C. Wang |
| 國立東華大學 |
2005 |
White-light emission from organics-capped ZnSe quantum dots and application in white-light-emitting diodes
|
祁錦雲; Jim-Yong Chi; Hsueh Shih Chen; Shian Jy Jassy Wang; Chun Jeu Lo |
| 國立東華大學 |
2005 |
Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling
|
祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; Y. P. Chen; J.S.Wang |
| 國立東華大學 |
2005 |
Quantum-Dot Infrared Photodetectors With p-Type-Doped GaAs Barrier Layers
|
祁錦雲; Jim-Yong Chi; Chou, S.-T.; Tsai, C.-H.; Wu, M.-C.; Lin, S.-Y.; |
| 國立東華大學 |
2005 |
Effect of Nitrogen Incorporation into InAs layer in InAs/InGaAs Self-Assembled Quantum Dots
|
祁錦雲; Jim-Yong Chi; Jenn-Fang Chen; Ru-Shang Hsiao; Yu-Chih Chen; Yi-Ping Chen; Ming-Ta Hsieh; Jyh-Shyang Wang |
| 國立東華大學 |
2005 |
Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
|
祁錦雲; Jim-Yong Chi; H-P D. Yang; C. Lu, R. Hsiao; C. Chiou; C.Lee; C. Huang; H.Yu; C.Wang; K Lin; N A Maleev; A R Kovsh; C Sung; C Lai; J Wang; J Chen; T Lee |
| 國立東華大學 |
2005 |
N incorporation into InGaAs cap layer in InAs self-assembled quantum dots
|
祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; P. C. Hsieh; Y. J. Chen; Y. P. Chen; J. S. Wang; J. Y. Chi |
| 國立東華大學 |
2005 |
Single mode InAs quantum dot photonic crystal VCSELs
|
祁錦雲; Jim-Yong Chi; H.P.D. Yang; Y.H. Chang; F.I. Lai; H.C. Yu; Y.J. Hsu; G. Lin; R.S. Hsiao; H.C. Kuo; S.C. Wang ;J.Y. Chi |
| 國立東華大學 |
2005 |
Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots
|
祁錦雲; Jim-Yong Chi; Jyh-Shyang Wang; Ru-Shang Hsiao; Jenn-Fang Chen; Chu-Shou Yang; Lin, G.; Chiu-Yueh Liang; Chih-Ming Lai; Hui-Yu Liu; Tung-Wei Chi; Chi, J.-Y. |
| 國立東華大學 |
2005 |
Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs
|
祁錦雲; Jim-Yong Chi; F. Chen, R. S. Hsiao, and C. K. Wang, J. S. Wang, J. Y. Chi |
| 國立東華大學 |
2005 |
Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy
|
祁錦雲; Jim-Yong Chi; K. P. Chang; S. L. Yang; D. S. Chuu; R. S. Hsiao; J. F. Chen; L. Wei; J. S. Wang; J. Y. Chi |
| 國立東華大學 |
2005 |
Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
|
祁錦雲; Jim-Yong Chi; Yang, H.P.D.; Lai, F.I.; Chang, Y.H.; Yu, H.C.; Sung, C.P.; Kuo, H.C.; Wang, S.C.; Lin, S.Y.; Chi, J.Y. |
| 國立東華大學 |
2005 |
Device simulation for GaAs/AlGaAs superlattice infrared photodetector with a single current blocking layer
|
祁錦雲; Jim-Yong Chi; Jan-Yves Clames; Shih-Yen Lin; Jim-Yong Chi; Shu-Ting Chou ;Meng-Chyi Wu |
| 國立東華大學 |
2005 |
Thin single-crystal Sc2O3 films epitaxially grown on Si (111)— structure and electrical properties
|
祁錦雲; Jim-Yong Chi; C.P. Chen; M. Hong; J. Kwo; H.M. Cheng; Y.L. Huang; S.Y. Lin; J. Chi; H.Y. Lee; Y.F. Hsieh ;J.P. Mannaerts |
| 國立東華大學 |
2005 |
High-Performance 30-Period Quantum-Dot Infrared Photodetector
|
祁錦雲; Jim-Yong Chi; Shu-Ting Chou; Shih-Yen Lin; Ru-Shang Hsiao; Jim-Yong Chi; Jyh-Shyang Wang; Meng-Chyi Wuag; Jenn-Fang Chen |
| 國立東華大學 |
2005 |
Temperature Dependence of Carrier Dynamics for InAs/GaAs Quantum Dot Infrared Photodetectors
|
祁錦雲; Jim-Yong Chi; Chun Yuan Huang; Shih-Yen Lin; Jim-Yong Chi; Shu-Ting Chou; Cheng-Shuan Tsai |
| 國立東華大學 |
2005 |
Singlemode Monolithically Quantum-Dot Vertical-Cavity Surface-Emitting Laser in 1.3 μm with Side-mode Suppression ratio > 30dB
|
祁錦雲; Jim-Yong Chi; Y.H. Chang; G.R. Lin; H.C. Kuo; J.Y. Chi; S.C. Wang |
| 國立東華大學 |
2005 |
Surface photovoltage spectroscopy and photoluminescence study of vertically stacked self-assembled InAs/GaAs quantum dots
|
祁錦雲; Jim-Yong Chi; Sitarek, P.; Hsu, H.P.; Chen, H.S.; Huang, Y.S.; Wang, J.S.; Lai, C.M.; Wei, L.C.; Hsiao, R.S.; Lin, S.Y.; Chi, J.Y. |
| 國立東華大學 |
2005 |
Characteristics of Oxide-Implanted Photonic Crystal Vertical-Cavity Surface-Emitting Lasers
|
祁錦雲; Jim-Yong Chi; H. P. D. Yang; F. I. Lai;Y. H. Chang; H. C. Yu; C. P. Sung; H. C. Kuo; S. C. Wang; S. Y. Lin; J. Y. Chi |
| 國立東華大學 |
2005 |
Quantum-Dot Infrared Photodetectors with P-Type Doped GaAs Barrier Layers
|
祁錦雲; Jim-Yong Chi; Shu-Ting Chou; Cheng-Hsuan Tsai; Shih-Yen Lin; Jim-Yong Chi ; Meng-Chyi Wu |
| 國立東華大學 |
2005 |
The Influence of Growth Temperature on InAs/GaAs Quantum Dots
|
祁錦雲; Jim-Yong Chi; Chun-Yuan Huang; Tzu-Min Ou;Wen-Ten Chang; Meng-Chyi Wu; Jeng-Jung Shen; Chiu-Yueh Liang; Shih-Yen Lin; Jim-Yong Chi |
| 國立東華大學 |
2005 |
Depletion-mode InGaAs/GaAs MOSFET with oxide passivated by amorphous Si
|
祁錦雲; Jim-Yong Chi; P. J. Tsai; U.N.Chiu;L. K. Chu; Y. W. Chen; H. P. Yang; P. Chang; J. Kwo; J. Chi; M. Hong |
| 國立東華大學 |
2005 |
Growth Rate Effects on InGaAs/GaAs Quantum Dots
|
祁錦雲; Jim-Yong Chi; Chun-Yuan Huang; Tzu-Min Ou; Wen-Ten Chang; Meng-Chyi Wu; Jeng-Jung Shen; Chiu-Yueh Liang; Shih-Yen Lin; Pen Chang; Tsung-Da Lin; Minghwei Hong; J. Kwo; Jim-Yong Chi |
| 國立東華大學 |
2005 |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx / GaAs single quantum well with high N content grown by molecular beam epitaxy
|
祁錦雲; Jim-Yong Chi; Fang-I Lai; S. Y. Kuo;J.S. Wang;H.C. Kuo; J. Chi; S. C. Wang; H. S. Wang; C. T. Liang; Y. F. Chen |
| 國立東華大學 |
2005 |
MBE growth of high quality vertically coupled InAs/GaAs quantum dots laser emitting around 1.3um
|
祁錦雲; Jim-Yong Chi; R. S. Hsiao; J. S. Wang; G. Lin; C. Y. Liang; H. Y. Liu; T.W.Chi; J. F. Chen;J. Y. Chi |
