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Showing items 26-35 of 43  (5 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2020-12-21 AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier Wang;Tien-Yu;Lai;Wei-Chih;Sie;Syuan-Yu;Chang;Sheng-Po;Wu;Yuh-Renn;Chiou;Yu-Zung;Kuo;Cheng-Huang;Sheu;Jinn-Kong
國立成功大學 2020-11-19 Cobalt Oxide Nanofilms on n-GaN Working Electrodes for Photoelectrochemical Water Splitting Liao;Chia-Che;Yao;Yu-Tsun;Kogularasu;Sakthivel;Liao;Po-Hsun;Lee;Ming-Lun;Sheu;Jinn-Kong
國立成功大學 2020-10 Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask Lee;Ming-Lun;Chen;Ching-Hua;Sheu;Jinn-Kong
國立成功大學 2020-10 NiOx nanoparticles as active water splitting catalysts for the improved photostability of a n-GaN photoanode Wang;Huang-Kai;Kogularasu;Sakthivel;Liao;Po-Hsun;Yao;Yu-Tsun;Lee;Ming-Lun;Sheu;Jinn-Kong
國立成功大學 2020-08-7 Rationally designed RGO@CuO@Mn(2)O(3)as an excellent electrocatalyst for the rapid and real-time detection of 2-nitrophenol Sriram;Balasubramanian;Kogularasu;Sakthivel;Wang;Sea-Fue;Sheu;Jinn-Kong
國立成功大學 2020-04-30 Photoelectrochemical Generation of Hydrogen and Formic Acid Using GaN Films Decorated with TiO2/Ag Nanoparticles Composite Structure as Photoelectrodes Sheu;Jinn-Kong;Liao;Po-Hsun;Lee;Yen-Cheng;Wang;Huang-Kai;Lee;Ming-Lun
國立成功大學 2020-02-17 UV light-emitting diodes grown on GaN templates with selective-area Si implantation Lee;Ming-Lun;Liao;Po-Hsun;Cheng;Hsin-Yan;Yen;Wei-Yu;Sheu;Jinn-Kong
國立成功大學 2019-11 Graphene Quantum Dot Vertical Cavity Surface-Emitting Lasers Lee;Ya-Ju;Yeh;Ting-Wei;Zou;Chen;Yang;Zu-Po;Chen;Jia-Wen;Hsu;Pei-Lun;Shen;Ji-Lin;Chang;Chun-Chieh;Sheu;Jinn-Kong;Lin;Lih, Y.
國立成功大學 2019-11 Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater Lee;Ming-Lun;Liao;Po-Hsun;Li;Guan-Lun;Chang;Hung-Wei;Lee;Chi-Wing;Sheu;Jinn-Kong
國立成功大學 2019-03-1 Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth Lee;Ming-Lun;Wang;Shih-Sian;Yeh;Yu-Hsiang;Liao;Po-Hsun;Sheu;Jinn-Kong

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